| HS Code | 923932 |
| Chemical Formula | C3H8O |
| Cas Number | 67-63-0 |
| Molecular Weight | 60.10 g/mol |
| Purity | ≥99.99% |
| Grade | SEMI G4 |
| Appearance | Clear, colorless liquid |
| Boiling Point | 82.5°C at 760 mmHg |
| Melting Point | -89.5°C |
| Flash Point | 11.7°C (closed cup) |
| Density | 0.786 g/cm³ at 20°C |
| Refractive Index | 1.377 at 20°C |
| Solubility | Miscible in water and most organic solvents |
As an accredited Isopropyl Alcohol, Electronic Grade SEMI G4 ≥99.99% factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in a 4 L high-purity glass bottle with a PTFE-lined, nitrogen-purged cap for contamination-free electronic-grade use. |
| Container Loading (20′ FCL) | 20′ FCL loading of Isopropyl Alcohol (SEMI G4, ≥99.99%) in sealed drums, ensuring contamination-free, safe handling for electronics manufacturing. |
| Shipping | Shipping requires compliance with hazardous materials regulations. Isopropyl Alcohol, Electronic Grade SEMI G4 ≥99.99%, is classified as UN1219, Class 3 Flammable Liquid, Packing Group II. It must be transported in properly grounded, sealed containers, away from ignition sources. Shipments require hazard labels, documentation, and specialized carrier approval for ground transport. |
| Storage | Store in tightly sealed, original or compatible containers in a cool, dry, well-ventilated area. Keep away from heat, sparks, open flames, and strong oxidizers. Use grounded bonding procedures to prevent static discharge. Avoid moisture contamination and direct sunlight. Ensure the storage area is clearly labeled, accessible only to trained personnel, and equipped with appropriate fire suppression and spill containment systems. |
| Shelf Life | Shelf life is typically 2-3 years when stored sealed, cool, and dry, avoiding moisture and contamination. |
Front-end semiconductor fabrication lines that process 300 mm wafers at design rules of 5 nm and below use the ≥99.99% SEMI G4 isopropyl alcohol as a point-of-use rinse and drying solvent in single-wafer spin processors, where water remaining in high-aspect-ratio shallow trench isolation features generates capillary pressure gradients that collapse line arrays before etch. Production-scale tools dispense the solvent through 0.1 µm PTFE membrane filters at 0.2–0.5 MPa nitrogen pressure, with nozzle clearance of 1–3 mm above wafer centre; recirculating bath turnover is set at 6–8 h because atmospheric water uptake above 100 ppm increases metallic carryover and reduces drying performance. Compliance anchors for this operation are SEMI C17-0616 for electronic-grade isopropanol, ASTM D512-13 for trace chloride, ASTM D1293-18 for pH, IEST-STD-CC1246F for surface particulate levels, and ISO 14644-1 Class 3 for cleanroom airborne cleanliness. The formulation addition ratio is 100 vol% IPA at final rinse and 30–50 vol% IPA in ultrapure water for post-CMP pre-rinse on copper or tungsten surfaces; the ratio is adjusted so that surface tension remains below 30 mN/m at 25 °C. The downstream process follows dilute HF or SC1/SC2 cleaning with a 30–120 s IPA rinse at 25–60 °C, then slow-pull Marangoni drying under IPA vapour at 60–75 °C and spin speeds of 800–2000 rpm. Terminal product classes include CMOS logic, DRAM, NAND flash, analog/power, RF front-end, and MEMS wafers.
The critical process conflict is pattern collapse: when IPA purity falls below 95 vol% through water absorption, capillary force increases at aspect ratios above 6:1, producing line wiggling and pull-down. Tanks are therefore fitted with online Karl Fischer moisture monitoring, and the material is blanketed with dry nitrogen during idle periods. Equipment is hardened for a closed-cup flash point of 12 °C, with exhaust interlocks, oxygen monitoring below 4 vol% where solvent vapour exceeds 2 vol%, and conductive PFA or electropolished stainless steel wetted parts to preserve metal purity.
In flat-panel display backplane and OLED front-end lines processing Gen 6 to Gen 8.5 glass substrates, the ≥99.99% SEMI G4 isopropyl alcohol is applied in open ultrasonic baths and spray rinse chambers, with a specific use on vacuum metal shadow masks that define RGB emissive layers. Chloride residue from mask cleaning can migrate into the OLED stack and accelerate dark-spot formation; the final rinse therefore requires anhydrous IPA rather than water-diluted blends. Compliance is maintained through SEMI C17-0616, ASTM D512-13 for chloride, ISO 14644-1 Class 4 for mask cleaning environments, and IEST-STD-CC1246F for particulate control on contact surfaces. The formulation addition ratio for glass substrate cleaning is 40–70 vol% IPA in deionized water; for final shadow mask rinse the ratio is 100 vol% IPA, because any water fraction leaves sub-µm drying marks on the mask surface. In the production process, substrates and masks are immersed in 40 kHz ultrasonic baths at 35–50 °C for 5–10 min, then moved to an IPA vapour distillation chamber at 60–75 °C and dried with a nitrogen air knife at 0.4 MPa. Terminal product types include LCD panels, OLED displays, LTPS TFT backplanes, touch sensors, and foldable display cover windows.
Electronics-grade IPA is consumed in HDD media manufacturing as a carrier and rinse solvent in diamond superfinish, where residual abrasive particles above 0.1 µm on plated Al-Mg or glass substrates reduce glide height clearance and increase thermal asperity counts. The cleaning line is qualified to SEMI C17-0616 for solvent purity, ASTM D512-13 for trace chloride, ISO 14644-1 Class 5 for airborne particulate, and internal particle count limits of not more than 3,520 particles/m³ at 0.5 µm. The formulation addition ratio is 5–15 vol% IPA in deionized water for the lapping coolant and 100 vol% IPA for the final two-stage rinse. Lapping uses polyurethane pads at 0.5–1.0 m/s relative velocity with diamond slurry in the 0.05–3 µm range; the rinse sequence follows with 40 kHz ultrasonic cleaning at 30–40 °C and nitrogen drying at 60 °C for 20 min. Terminal product types include hard-disk platters, read/write sliders, and head-gimbal assemblies. Published production data for the exact correlation between IPA bath residence time and glide height yield are limited; bath exchange intervals are therefore set by particle counts rather than solvent assay alone.
For end-face cleaning of zirconia ferrules and MPO/MT multi-fiber ferrules, the ≥99.99% SEMI G4 isopropyl alcohol is the primary solvent used in automated assembly stations, because hydrocarbon residue above 1 ng/mm² on the ferrule end face shifts insertion loss after repeated mating cycles. The formulation addition ratio is 100 vol% IPA without dilution, filtered to 0.05 µm at the point of use, and controlled to less than 100 ppm water. Compliance for the cleaning procedure is aligned to IEC 61300-3-35 for visual inspection of connector end faces, IEC 61300-3-4 for attenuation measurement of mated connectors, and ISO 14644-1 Class 6 for the assembly environment. The production process delivers 0.5–1.0 µL of IPA per ferrule through an automated cleaning tip, then purges the end face with clean dry air at 0.3 MPa for 3–5 s before inspection at 200× magnification. Terminal product types include LC, SC, FC and MPO-12/24 connectors, fiber optic transceivers, and wavelength-division multiplexing modules. Open-cell swab variants are limited to manual rework because excessive saturation releases lint; high-humidity storage above 55% RH can raise water content and create drying spots on angled physical contact end faces.
When LiPF6-based carbonate electrolytes are used in lithium-ion cell assembly, cleaning of cap edges, tab welds, and pouch sealing surfaces must remove residual electrolyte before laser welding, because the residual salt hydrolyses in contact with atmospheric moisture to form HF and carbonates that weaken seal integrity. The ≥99.99% SEMI G4 isopropyl alcohol is dispensed in dry rooms held at −40 to −50 °C dew point and ISO 14644-1 Class 7 particle load, with final cell qualification referencing IEC 62660-3 for electrical and mechanical performance and UN 38.3 for transport safety. The formulation addition ratio is 100 vol% IPA on electrolyte-contaminated sealing surfaces; water dilution is not permitted because 0.1 vol% water accelerates LiPF6 hydrolysis and raises HF generation. A 70 vol% IPA/30 vol% deionized water mixture is restricted to non-critical tooling surfaces. The production process after formation includes inversion of the cell, removal of residual electrolyte beads with low-lint polyester wipes saturated with 0.1 µm-filtered IPA, a solvent dwell time below 5 min, vacuum baking at 60 °C for 30 min under −0.08 MPa, and immediate laser sealing. Closed-cup flash point of 12 °C requires explosion-proof dispensing, local exhaust, and shift-limited quantities in the dry room. Terminal product types include 18650 and 21700 cylindrical cells, prismatic cells, and pouch cells for electric vehicles, energy storage systems, notebook battery packs, and portable electronics.
In printed circuit board assembly lines placing 0.1 mm pitch BGA and 0201 chip components, electronic-grade IPA is used to remove solder paste misprints, stencil soil, and selected flux residues before reflow. The cleaning process is controlled to IPC-TM-650 2.3.25 for ion chromatography, J-STD-001H for the 1.56 µg/cm² NaCl equivalent cleanliness limit, IPC-CH-65B for board cleaning guidance, and ISO 14644-1 Class 7 for rework areas. The formulation addition ratio is 100 vol% IPA for immersion cleaning of misprinted boards, 70–80 vol% IPA in deionized water for automatic stencil bottom-wipe systems, and 25–40 vol% IPA in deionized water for defluxing rinse processes on low-standoff components when no saponifier is used. The production process includes immersion in a 40 kHz ultrasonic bath at 30–40 °C for 5–10 min, spray rinsing with 0.2 µm-filtered IPA at 0.3 MPa, drying at 60 °C for 20 min, and ionic contamination verification before reflow. Amine-based saponifiers are kept separate from IPA because blending changes phase stability and flash-point behaviour. Terminal product types include server mainboards, automotive engine control units, 5G modules, and BGA-SiP assemblies. The solvent is not applied to unsealed quartz oscillators or MEMS microphones because capillary wicking leaves internal residue under the component body.
Competitive Isopropyl Alcohol, Electronic Grade SEMI G4 ≥99.99% prices that fit your budget—flexible terms and customized quotes for every order.
For samples, pricing, or more information, please contact us at +8618136850665 or mail to sales4@ascent-chem.com.
We will respond to you as soon as possible.
Tel: +8618136850665
Email: sales4@ascent-chem.com
Flexible payment, competitive price, premium service - Inquire now!
Product identity: isopropyl alcohol, electronic grade, SEMI G4, minimum assay 99.99%, CAS 67-63-0, formula (CH3)2CHOH, molar mass 60.10 g/mol. The solvent is supplied as a low-water, low-residue volatile alcohol intended for semiconductor wafer drying, photoresist edge-bead removal, substrate rinsing, and critical cleaning in microelectronic fabrication. The SEMI G4 designation separates this material from USP, ACS, and technical grades by its control envelope for trace ionic contamination, particle burden, and water content, not solely by bulk assay. Packaging configurations include rinsed 1 L, 4 L, and 20 L fluoropolymer-lined containers, stainless steel pressure canisters, and bulk transfill, with lot-specific certificates of analysis.
Verification of the 99.99% minimum assay is established by gas chromatography. The reference to ASTM D770 permits method-aligned comparison across suppliers. Water in the volatile matrix is determined by Karl Fischer titration; ASTM E203 and ASTM D1364 are commonly referenced for water in organic solvents. Non-volatile residue is measured by controlled evaporation and mass balance, with ASTM D1353 used as the method reference for volatile solvents. Trace metal analysis is performed by ICP-MS after organic matrix elimination. Complete numerical limits for all SEMI G4 parameters are supplier-specific and must be fixed in the purchase specification; the grade designation alone is not a substitute for a full SEMI C8 Grade 4 parameter schedule.
Low water content in electronic-grade IPA is not obtained by simple fractional distillation alone because isopropanol forms a minimum-boiling azeotrope with water at approximately 87.7 wt% IPA and 80.4 °C. Dehydration below the azeotrope composition requires azeotropic distillation with a third component, molecular sieve adsorption, or membrane drying, followed by cleanroom packaging. This processing history is one practical distinction between semiconductor-grade IPA and an ordinary distillation cut.
ACS reagent-grade isopropyl alcohol carries a minimum assay of 99.5%. USP monographs apply pharmaceutical limits for water, residue, and related substances. Neither grade is specified for sub-ppb trace-metal burdens or for the particle levels required in front-end wafer processing. Technical-grade material may contain higher water, ketone and aldehyde by-products, and dissolved metals that become defect mechanisms in semiconductor cleaning. The electronic-grade product is controlled to a minimum assay of 99.99% and is further filtered and packaged to maintain a low particle population at point of use. The critical difference is not simply a distillation cut; it is the package of low residue, low water, controlled metals, and controlled particles verified by lot-specific analysis.
| Grade | Typical Minimum Assay | Water and Non-Volatile Residue | Trace Metal and Particle Control | Principal Use Boundary |
|---|---|---|---|---|
| SEMI G4 electronic | 99.99% | low ppm; lot-specific certificate of analysis | ppb-level metals; filtered at 0.05–0.1 µm typical | wafer drying, lithography edge-bead removal, critical cleaning |
| ACS reagent | 99.5% | water typically ≤0.2%; NVR typically ≤0.005% | not specified for semiconductor ppb metal or particle classes | analytical and general laboratory use |
| USP | 99.0% | per USP monograph | not established for sub-ppb electronic-grade metals or particles | pharmaceutical and non-critical solvent cleaning |
| Technical | variable, generally 95–99% | not controlled | uncontrolled residues, metals, and particles | non-critical industrial use |
In single-wafer cleaning and drying tools, the solvent is introduced after ultrapure water rinse. The physical basis for low-defect drying is the lower surface tension of IPA—approximately 21.7 mN/m at 20 °C for the anhydrous material—compared with 72.8 mN/m for water at the same temperature. This surface-tension differential reduces capillary pressure in high-aspect-ratio features and limits pattern collapse. The vapor pressure of the solvent is approximately 4.4 kPa at 20 °C, which supports rapid spin-off and evaporation. The drying effect diminishes quickly if the water content of the IPA rises through open-container absorption or inadequate line purge. Water content is therefore treated as a process-critical variable rather than a routine purity parameter.
At the dispense side, point-of-use filtration is configured with hydrophobic PTFE or polypropylene membranes rated from 0.05 µm to 0.1 µm. Tighter retention is applied for particle-sensitive lithography and wet-clean loops. The filter housing and downstream tubing are assembled to minimize dead legs because stagnant solvent in dead volumes can release particulate or ionic contamination. Before first use and after filter replacement, the line is purged and sampled for particle counts. Filter replacement is triggered by differential pressure rise or by cumulative dispense volume, whichever occurs first. These measures are operational, not remedial; they maintain delivered cleanliness but do not correct bulk contamination introduced upstream.
| Parameter | Method | Typical Verified Metric |
|---|---|---|
| Assay | GC-FID, ASTM D770 | ≥99.99% |
| Water | Karl Fischer, ASTM E203 / ASTM D1364 | lot-specific low ppm limit |
| Non-volatile residue | evaporation balance, ASTM D1353 | lot-specific low ppm limit |
| Acidity | titration, ASTM D1613 | lot-specific limit |
| Density | digital densitometer, ASTM D4052 | 0.785 g/cm³ at 20 °C |
| Trace metals | ICP-MS after organic matrix elimination | SEMI C8 Grade 4 purchase criteria |
| Particles | liquid optical particle counter | lot-specific limit at 0.1 µm threshold |
The density check provides rapid confirmation of solvent identity and gross water contamination. When the incoming container is released to the line, lot traceability is maintained through the certificate of analysis and an internal lot number assigned before use. For critical operations, additional point-of-use sampling may be specified for particle counts and water content after the container is connected to the dispense system.
Open-container handling in a cleanroom with relative humidity above 60% can raise the water content of hygroscopic isopropanol beyond the lot-specific certificate value. Closed-loop dispensers with nitrogen blanketing are used for defect-sensitive operations. Blanketing nitrogen is supplied at 99.999% minimum purity and passed through a particle filter before entering the solvent storage vessel. Storage and transfer equipment are electrically grounded because the solvent has a closed-cup flash point of approximately 11.7 °C. Transfer is conducted away from open ignition sources and incompatible oxidizers. The solvent must not be mixed with piranha solutions containing sulfuric acid and hydrogen peroxide; the reaction is strongly exothermic and can become violent. Process tools must be rated for flammable solvent service and equipped with appropriate ventilation and interlocks.
Wetted components in continuous solvent service are typically 316L stainless steel or fluoropolymers such as PTFE and PFA. Polycarbonate and acrylic sight glasses may be attacked by prolonged solvent contact and are not specified in continuous high-purity dispense paths without compatibility validation. The solvent does not dissolve metal oxides or serve as a chelator. Its function in cleaning is displacement, dilution, and drying rather than chemical dissolution of metallic contamination. Aqueous metal-removal chemistry must precede IPA rinse and dry.
The solvent is compatible with many positive-tone photoresist edge-bead removal nozzles, but its role is dilution and rinse, not bulk stripping of crosslinked resists. Strongly crosslinked negative-tone resist films may remain insoluble in IPA and require a dedicated organic stripper. Residue behavior on metal-oxide and silicon-nitride surfaces is process-specific. Because the solvent evaporates rapidly, film drying may be non-uniform on substrates with high thermal mass or on cold surfaces. Published data for residue formation on all device-specific film stacks is limited; qualification therefore requires blank wafer tests, contact-angle measurement, and defect inspection after the intended wet-clean sequence. Substitution of lower-purity isopropyl alcohol in place of the electronic-grade product changes residue and mobile-ion load and may invalidate the qualified process.
For quartz photomask cleaning and pellicle-frame preparation, the solvent is applied through ultraclean swab or spin-rinse pathways. In these applications, trace metal and non-volatile residue are controlled because residues can create printable haze defects or change reticle transmission. The particle specification is tied to reticle inspection sensitivity, and fabs may impose additional point-of-use filtration requirements beyond the bulk certificate of analysis. In MEMS release and CO2 critical-point drying, IPA is often selected as an intermediate solvent because of its miscibility with water and liquid CO2; the low-water electronic grade supports predictable transfer through the exchange sequences. In all cases, the final process boundary is defined by the device-specific defect inspection limit, not by bulk assay alone.
