| HS Code | 988051 |
| Chemical Formula | C3H8O |
| Cas Number | 67-63-0 |
| Molecular Weight | 60.10 g/mol |
| Product Name | Isopropyl Alcohol, Electronic Grade SEMI G3 ≥99.9% |
| Grade | Electronic Grade SEMI G3 |
| Purity | ≥99.9% |
| Appearance | Clear colorless liquid |
| Boiling Point | 82.5°C |
| Melting Point | -89.5°C |
| Flash Point | 11.7°C (closed cup) |
| Density | 0.786 g/cm³ at 20°C |
| Refractive Index | 1.3776 at 20°C |
| Vapor Pressure | 4.4 kPa at 20°C |
| Solubility In Water | Miscible |
| Autoignition Temperature | 399°C |
As an accredited Isopropyl Alcohol, Electronic Grade SEMI G3 ≥99.9% factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 1 L HDPE bottles with secure seals, ensuring high-purity Isopropyl Alcohol SEMI G3 ≥99.9% remains contamination-free. |
| Container Loading (20′ FCL) | Load 20′ FCL with palletized drums/IBCs of electronic-grade isopropyl alcohol. Secure bracing, hazmat placards, ventilation, and segregation from incompatible materials. |
| Shipping | Shipping: UN1219, Class 3 (flammable liquid), Packing Group II. Supplied in sealed, contamination-resistant containers under inert atmosphere. Transport via ground or air (regulated quantities) with proper hazard labeling. Store away from ignition sources, oxidizers, and humidity. Maintain upright orientation; avoid extreme temperatures to preserve SEMI G3 purity. |
| Storage | Store in a clean, tightly sealed, compatible container (stainless steel or HDPE) under dry nitrogen blanketing to preserve ≥99.9% purity. Keep in a cool, well-ventilated area away from heat, sparks, open flames, and strong oxidizers. Bond and ground containers. Limit access, use dedicated area, and follow SEMI G3 handling protocols. |
| Shelf Life | Shelf life is typically 3 years from manufacture if stored sealed, in original container, away from heat, light, and moisture. |
On single-wafer cleaning platforms running post-etch residue removal after reactive ion etch and ash, isopropyl alcohol certified to SEMI C21 Grade G3 is dispensed through the center arm as the intermediate organic rinse following a dilute HF last wet etch. The solvent’s surface tension of 21.7 mN/m at 20 °C against deionized water’s 72.8 mN/m enables the rinse meniscus to penetrate high-aspect-ratio trench sidewalls and to reduce capillary-residue bridging in dual damascene low-k stacks. A production recipe on a 300 mm chamber typically sets dispense flow between 0.5 L/min and 1.5 L/min, wafer rotation at 300 rpm to 800 rpm during chemical exposure, and spin-off at 1,500 rpm to 2,500 rpm for 30–45 s under a heated nitrogen curtain. The wafer then passes an edge-backside rinse with the same lot to remove any redeposited silica from the bevel. Point-of-use filtration through 0.03–0.05 µm hydrophobic polytetrafluoroethylene or ultrahigh-molecular-weight polyethylene membranes is mandatory because cellulosic depth filters swell in isopropanol and release alpha-cellulose particles onto the wafer. Liquid-contact stainless steel is electropolished 316L with surface roughness controlled to Ra ≤ 0.25 µm; welded joints use orbital welding to avoid crevices that trap liquid and support microbial growth.
| Parameter | Test method | Typical acceptance window |
|---|---|---|
| Water content | ASTM E1064 coulometric Karl Fischer | ≤0.05 wt% |
| Non-volatile residue | ASTM D1353 | ≤5 mg/L |
| Chloride | ASTM D512 | ≤0.1 mg/kg |
| Sulfate | ASTM D516 | ≤0.2 mg/kg |
| Trace metals, specified set | ASTM D5673 ICP-MS | ≤10 µg/kg per element |
The low water ceiling of the G3 lot is the main process boundary. Water contents above 0.05 wt% produce microdroplet residues on hydrophobic low-k sidewalls after spin dry; these are detected as watermarks by brightfield inspection at 0.16 µm sensitivity. The dispense system is interlocked with a lower flammable limit monitor set to alarm at 10% LFL and shutdown at 20% LFL, based on the closed-cup flash point of 12 °C under ASTM D56. Idle periods longer than 30 min trigger a nitrogen purge of the dispense line because ambient moisture ingrowth raises the water content at the point of use even when the bulk drum is in specification. For a high-volume 65 nm node logic process, the post-clean defect density target is commonly below 0.03 defects/cm² for particles larger than 0.09 µm; lots failing this threshold are reworked or scrapped.
The backside rinse nozzle on a lithography coater track uses SEMI G3 isopropanol to dilute and carry away photoresist residue from the wafer bevel and backside after the primary edge bead removal step has run with propylene glycol monomethyl ether acetate. The replacement of water with isopropanol is driven by the requirement to wet the bevel radius and the edge exclusion boundary without lifting the chemically amplified resist film. The backside rinse recipe on a 300 mm coater dispenses 20–60 mL/min at wafer rotation speeds of 700–1,200 rpm for 5–10 s, followed by a 15–25 s spin dry at 1,800–2,200 rpm. The solvent nozzle is positioned with a 0.5–1.0 mm offset from the wafer edge to avoid aerosol splash onto the top-side resist. Use of a low-water grade prevents the formation of a hydrated boundary layer that can cause photoresist footing at the edge and variable critical dimension after develop. Tool exhaust is maintained at 0.35–0.50 m/s face velocity across the coater bowl to keep solvent vapor below 10% LFL. The final edge exclusion target for critical layers is typically 0.3–0.5 mm, verified by automated edge inspection after develop.
In OLED evaporation, fine metal masks and common metal masks are cleaned after organic deposition campaigns. SEMI G3 isopropanol is used as the intermediate rinse after a selective stripper has dissolved the bulk of the organic hole-transport or electron-transport layer residue, not as the primary stripper. A reclamation line uses a SUS316L ultrasonic tank with center frequency of 40 kHz to 80 kHz, specific power between 80 W/L and 120 W/L, and immersion time of 10–20 min at 30–40 °C. Tank heating is interlocked so that the liquid cannot exceed 40 °C, maintaining a safety margin above the 12 °C flash point while allowing aggressive cavitation cleaning of mask apertures. After immersion, the masks pass through two counter-current rinse stages of fresh G3 IPA and then into a nitrogen knife dryer that removes liquid from slit openings without leaving water spots. The aperture width and straightness are checked on a toolmaker microscope with measurement uncertainty of ±2 µm; masks with deviation beyond the original drawing tolerance are rejected because alignment shift in the evaporator produces shadow defects. Published production data for this specific reclamation configuration is limited; the cycle parameters are typically qualified per mask type by sequential cleaning trials rather than by fixed universal settings. Water content above 0.1 wt% from atmospheric absorption increases oxide residue on mask edges after drying, which requires an additional wiping step.
Single-mode and multimode connector assembly requires SEMI G3 isopropanol metered onto lint-free cleaning sticks or cassette reel wipers to remove epoxy films, capstan oil, and dust from zirconia, glass-filled polyphenylene sulfide, or phosphor bronze ferrules. The inspection standard IEC 61300-3-35 divides the end-face into core, cladding, adhesive, and contact zones; the cleaning procedure delivers 0.05–0.2 mL per end-face, followed by one wet wipe and one dry wipe within 5 s to prevent solvent evaporation leaving a residue ring. The low non-volatile residue and low metal content of electronic-grade material reduce the probability of particulate contamination in the cladding zone during ferrule curing. Cleaning is performed with downward-facing connectors to avoid capillary migration into the fibre hole; sprayed application is prohibited because free solvent can carry contaminants into the ferrule bore and increase insertion loss after mating. At final inspection at 200× or 400× magnification, reject criteria include any core defect, any adhesive zone contamination larger than 10 µm, and any contact zone contamination larger than 20 µm. A typical single-mode UPC connector after cleaning and mating shows insertion loss below 0.30 dB and return loss above 50 dB at 1310 nm and 1550 nm.
Stencil aperture clogging in high-mix surface-mount lines is addressed by automated under-stencil wipe modules that spray an ultra-low-water isopropanol onto a nonwoven polyester-cellulose blend and draw the wetted wipe across the bottom surface of a laser-cut stainless steel stencil. The system activates after every 5–10 print cycles, applying 0.02–0.06 mL of solvent per wipe at a pressure of 0.05–0.12 MPa and a traverse speed of 50–150 mm/s. The low residue content of the G3 grade prevents dried solvent film from entering 0.4 mm pitch QFP apertures when the stencil returns to the print position. Excessive solvent delivery floods apertures and causes solder paste bridging on fine-pitch pads, while insufficient delivery leaves tin-lead or SAC305 paste residue hardened along the aperture walls. Under-stencil cleaning compatibility is qualified against J-STD-004 and J-STD-005 solder paste test data; the solvent must not alter stencil coating adhesion or interact with solder flux activators. For lead-free paste with Type 4 powder, aperture release after automated cleaning is verified by solder paste inspection at 100% coverage on the bottom stencil layer.
After sacrificial oxide release etching, microelectromechanical structures with comb-drive actuation are transferred through graded isopropanol-water baths to displace water from narrow gaps before air drying or supercritical CO₂ transition. The G3 grade is used at 25:75, 50:50, and 75:25 IPA-to-water volume fractions, followed by two 100% isopropanol baths at 20–25 °C. Cassette transfer between baths is limited to 60 s to prevent the formation of a mixed meniscus that increases capillary force and can collapse 2 µm wide comb fingers with 20:1 aspect ratios. The water content of the final bath must remain below 0.05 wt% because higher water activity raises surface tension and brings the structure into the stiction failure region. After the final rinse, wafers are dried in a nitrogen-fed centrifugal dryer at 500 rpm for 5 min, then inspected by scanning electron microscopy for released structures. Metal contamination from reagent-grade IPA can deposit on electrostatic actuator surfaces and shift the pull-in voltage; electronic-grade specifications are therefore applied to the final bath only, while upstream bulk displacement may use technical grade under controlled drying conditions.
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Isopropyl Alcohol, Electronic Grade SEMI G3 ≥ 99.9%, is supplied as a specification-defined liquid rather than as a discrete hardware model. The product identifier designates a semiconductor-grade 2-propanol stream with CAS Registry Number 67-63-0, molecular formula C₃H₈O, and formula weight 60.10 g/mol. At 20 °C, the nominal density is 0.785 g/mL; the boiling point at 101.3 kPa is 82.3 °C; and the closed-cup flash point is 11.7 °C. The material falls within NFPA 30 Class IB flammable-liquid storage and should be dispensed through electrically grounded, explosion-proof or intrinsically safe equipment.
Lot certification normally reports assay by gas chromatography with flame ionization detection, water by Karl Fischer titration, non-volatile residue by gravimetric evaporation, and trace metals by ICP-MS. The assay floor of 99.9% corresponds to a water ceiling of 0.1% for this electronic-grade designation. Because SEMI G3 is a specification framework rather than a model number, the purchaser should confirm the applicable revision and supplier certificate before process qualification.
| Parameter | Control value | Test method |
|---|---|---|
| Assay as 2-propanol | ≥ 99.9% | Gas chromatography with FID, aligned to SEMI G3 |
| Water | ≤ 0.1% | ASTM E203-16 volumetric Karl Fischer titration |
| Non-volatile residue | ≤ 10 mg/kg | ASTM D1353-13 |
| Color | ≤ 10 APHA | ASTM D1209-05(2019) |
| Acidity as acetic acid | ≤ 10 mg/kg | ASTM D1613-17 |
| Density at 20 °C | 0.785 g/mL | ASTM D4052-21 |
| Critical trace metals by ICP-MS | supplier-specific action limits; critical ions often ≤ 10 µg/L | ICP-MS after evaporation |
Packaging usually occurs in cleanroom environments such as ISO 14644-1 Class 5, with rinsing and filling through 0.1 µm or 0.2 µm point-of-use filtration. Containers may include amber glass for small volumes and fluoropolymer-lined or high-density polyethylene drums for larger volumes. Stainless steel 316L is acceptable for permanent storage and distribution piping, whereas unlined carbon steel and copper are not recommended because extractable metals can exceed electronic-grade limits. Each container should remain sealed under nitrogen until use; repeated opening in ordinary ambient air can raise water content above the 0.1% ceiling, particularly at relative humidity above 60%.
ACS reagent-grade 2-propanol is generally specified at ≥ 99.5% assay and ≤ 0.5% water, with evaporation residue near 10 ppm. Those limits address laboratory analytical use, not metal-ion and particle contamination on semiconductor substrates. Technical-grade IPA, by contrast, can exhibit water contents above 1%, higher residue after evaporation, and variable trace-metal burden because packaging and transport are not configured for cleanroom transfer. SEMI G3 electronic grade applies semiconductor-oriented controls: low-water assay, low non-volatile residue, trace-cation and trace-anion reporting, and particle-filtered packaging. HPLC and LC-MS grades may be high-purity organic solvents, but their release criteria are oriented toward UV transmittance and LC-specific contamination rather than the front-end semiconductor wet-processing requirements covered by SEMI G3.
In single-wafer spin processing tools configured for 300 mm substrates, electronic-grade IPA is used as a surface-tension-reducing rinse after deionized water. Point-of-use filtration through 0.05 µm or 0.1 µm membranes is common, and dispense volumes are tool-specific. A representative range is 50 mL to 150 mL per wafer in backside and frontside rinse recipes, but equipment manufacturer settings take priority. Published data for this specific product in Marangoni drying systems is limited; process engineers should qualify defect and residue levels before replacing an existing electronic-grade IPA source in a production drying loop.
In gate oxide and thin-film cleaning, mobile ion contamination from sodium, potassium, and iron can shift electrical parameters and contribute to time-zero defectivity. Electronic-grade IPA used in immersion and spray processing should be evaluated by ICP-MS after evaporation, with detection limits for critical cations below 1 µg/L in qualified laboratories. Anion contamination, particularly chloride and sulfate, is monitored because residual inorganic acids can generate pitting or corrosion. Supplier-specific release limits for chloride and sulfate in semiconductor-grade IPA are often set below 1 mg/kg, but exact values depend on the SEMI G3 revision and downstream device sensitivity. In immersion tanks, the wetted materials of the tool itself can dominate the actual ionic load; quartz, PTFE, PFA, and PVDF are preferred over metallic components.
Wetted components in chemical delivery systems should be limited to PTFE, PFA, PVDF, high-density polyethylene, or 316L stainless steel. Elastomers such as FFKM, EPDM, and PTFE-encapsulated Viton are used for seals and O-rings, but extractables testing is required. Natural rubber, butyl rubber, and plasticized PVC are avoided because they can release organic residues and metal stabilizers. In piston pumps, configurations designed for low-shear and low-particle generation are preferred; peristaltic pumps with flexible tubing may require frequent tube replacement because solvent uptake can alter tube performance.
Isopropyl alcohol is a flammable organic solvent that can react exothermically with strong oxidizing agents such as hydrogen peroxide, nitric acid, or peroxide/sulfuric acid mixtures. In wet-processing facilities, segregated drain lines, storage zones, and chemical delivery systems are required to prevent accidental mixing. Local safety documentation typically prohibits the combination of IPA with piranha-type mixtures unless the specific reaction has undergone process hazard analysis. The product should not be stored adjacent to oxidizer cabinets. Emergency showers and eyewash stations are required near dispensing points. Spill containment should be sized for the largest container in the area and should be compatible with NFPA 30 Class IB flammables.
For ultrasonic cleaning at frequencies near 40 kHz, electronic-grade IPA can be used in open tanks only where ventilation, grounding, and fire controls are adequate. The closed-cup flash point of 11.7 °C requires local exhaust and continuous flammable-vapour monitoring; heating above 40 °C should be avoided unless the system is designed for flammable solvents. Vapour blasting or pressurised spraying with IPA should be performed with electrically classified equipment. In critical optics cleaning, residue after evaporation should be controlled at the point of use because non-volatile impurities in the dispensed liquid can remain on the surface after solvent evaporation.
The nominal water limit of 0.1% is established at packaging. Because 2-propanol is hygroscopic, open-container exposure at ambient relative humidity can increase water content within hours. The rate depends on headspace exchange, temperature, and relative humidity; in a ventilated cleanroom at 22 °C and 60% relative humidity, water uptake is measurable by Karl Fischer titration after repeated container opening. Use of dry nitrogen blanketing and sealed dispense reservoirs prevents this shift. Sampling procedures should minimize contact with humid air and should follow ASTM E203-16 for water determinations. Process engineers should also account for water pickup from wafer surfaces and wetted tool components when diluting IPA with deionized water for specialized drying processes.
For wipe cleaning of photomasks, stencils, or precision optics, electronic-grade IPA is typically applied with low-lint cleanroom wipes. The wipe itself can release extractable ions and fibers; therefore the final cleanliness is a function of the complete wipe-solvent-substrate system rather than the solvent alone. Extraction tests using ultrapure water or IPA should be performed on candidate wipes to establish whether total residue and metal contribution meet the required process budget. Published data for specific wipe and product combinations is limited, so qualification is lot- and device-specific.
At 20 °C, isopropyl alcohol has a surface tension near 21.7 mN/m, below that of water at 72.8 mN/m. This difference is exploited in drying of high-aspect-ratio trenches and vias where capillary forces can pull water into structures and cause pattern collapse. Effectiveness depends on the IPA-water mixture ratio and the final rinse sequence. In practice, organic solvent drying with IPA is limited by the finite water content in the solvent; residual water left in the structure can dilute the IPA film and raise the local surface tension. For critical geometries with aspect ratios above 10:1, process optimization is required, and published data for this specific product is limited.
In printed circuit board assembly, SEMI G3 IPA can be applied for removal of no-clean flux residues from stencils and underfill sites, but the product’s electronic-grade water and residue limits do not by themselves guarantee compatibility with solder masks or conformal coatings. Solder mask swelling and bond strength loss should be evaluated using the specific board and flux combination. Bench-scale immersion tests with the product at 25 °C for 5 min to 10 min can screen material compatibility before production use; these durations are commonly used screening values rather than universal process windows.
Point-of-use filtration is a critical control point because particles can be shed by valves, pumps, and tubing after the container. Membrane filters rated at 0.05 µm or 0.1 µm are installed immediately before the dispense nozzle to reduce particles. Liquid optical particle counters at 0.1 µm to 0.5 µm provide trending data. Acceptance limits are process-specific: a facility may adopt a maximum of 100 particles/mL at 0.1 µm and larger, but this value is not a fixed SEMI G3 requirement and must be verified for the installed distribution system.
Anhydrous IPA with water below 0.005% is a distinct product from SEMI G3 ≥ 99.9% when the water specification is tighter. Users with moisture-critical applications should request exact water and not assume that 99.9% assay implies near-zero water. The assay value includes water, so a product at 99.9% assay may still contain 0.1% water. Electronic-grade SEMI G3 IPA is not deliberately denatured with methanol, methyl isobutyl ketone, or denatonium benzoate; these additives are common in some industrial and cosmetic solvent streams and are disqualifying in semiconductor processing.
Warehouse storage should follow local flammable-liquid codes and avoid direct sunlight, heat sources above 40 °C, and open flames. Bulk storage tanks are typically blanketed with dry nitrogen and fitted with pressure-vacuum conservation vents with flame arrestors. Drum pumps should be electrically bonded and grounded; transfer lines should be static-dissipative or conductive. These measures are consistent with NFPA 30 and IEC 60079 hazardous-area classifications.
Suppliers of electronic-grade IPA commonly include lot-specific certificate-of-analysis data for assay, water, residue, acidity, color, density, and trace metals. The absence of a harmonized model number means two lots may share the SEMI G3 grade designation but differ in certain supplier-specific trace-metal reporting. For change control, new lots should be evaluated against the same test methods and, where possible, by a direct ICP-MS comparison of the previous qualified lot.
