| HS Code | 367196 |
| Product Name | Zhejiang Xinhua Chemical Co Ltd Isopropyl Alcohol Electronic Grade |
| Chemical Name | Isopropyl alcohol |
| Cas Number | 67-63-0 |
| Molecular Formula | C3H8O |
| Purity Percent | ≥99.9 |
| Appearance | Clear colorless liquid |
| Water Content Percent | ≤0.02 |
| Acidity As Acetic Acid Percent | ≤0.002 |
| Non Volatile Residue Percent | ≤0.005 |
| Solubility | Miscible in water and organic solvents |
As an accredited Zhejiang Xinhua Chemical Co Ltd Isopropyl Alcohol Electronic Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaging: 20 L drum of Zhejiang Xinhua Chemical electronic-grade isopropyl alcohol, high purity, sealed. |
| Container Loading (20′ FCL) | 20' FCL loading: Electronic-grade isopropyl alcohol securely packed in drums/IBCs, properly labeled, ventilated, and restrained for safe transport. |
| Shipping | Zhejiang Xinhua Isopropyl Alcohol Electronic Grade ships as a flammable liquid (UN1219, Class 3, PG II). Use grounded, sealed containers with proper venting, away from ignition sources. Ensure compliant labeling, documentation, and temperature control to preserve ultra-high purity and safety during transit. |
| Storage | Store in a tightly sealed, corrosion-resistant container in a cool, dry, well-ventilated area. Keep away from heat, sparks, open flames, and incompatible oxidizing agents. Protect from moisture and contamination to preserve electronic-grade purity. Use appropriate grounding and ensure secondary containment to prevent spills. |
| Shelf Life | Shelf life is 24 months from manufacture date when stored sealed, cool, dry, and away from ignition sources. |
Zhejiang Xinhua Chemical Co Ltd electronic-grade isopropyl alcohol is introduced at the back end of front-end-of-line wet processing as a final rinse solvent and drying aid after dilute hydrofluoric acid etching and ultrapure water overflow rinsing. In 300 mm single-wafer spin cleaning equipment, the material is dispensed through a 0.1 μm high-retention polytetrafluoroethylene point-of-use filter at 23 °C ± 2 °C. A standard 300 mm wafer pass consumes 30 mL to 60 mL of solvent, with dispense time of 15 s to 25 s at rotational speeds between 800 rpm and 1,200 rpm. The solvent reduces surface tension at the moving liquid-vapour meniscus, permitting Marangoni-type drying without water marks on high-aspect-ratio gate stacks. After dispense, heated nitrogen at 60 °C is swept across the wafer for 30 s. The terminal structure is a patterned silicon wafer with exposed low-k dielectric or metal interconnect features that must remain free of pattern collapse and metallic residue. The grade is controlled to SEMI C23 electronic-grade isopropyl alcohol parameters, with cationic impurities measured by inductively coupled plasma mass spectrometry and maintained at or below 1 ppb for sodium, potassium, calcium, iron, copper, zinc, and aluminium to protect gate oxide integrity. Moisture content is controlled below 0.1% by Karl Fischer coulometry per ASTM E1064. The process is incompatible with direct immersion in unventilated tanks when chamber relative humidity exceeds 65%, because water absorption from the air raises particle adhesion on the wafer surface. The main production-scale failure mode in megasonic immersion tanks is residue bridging in sub-40 nm trench structures when the solvent is recycled without intermediate distillation or when particle filters reach differential pressure above 0.3 MPa. The table below lists the metal impurity ceilings for this application.
| Element | Analytical method | Maximum concentration |
|---|---|---|
| Sodium (Na) | ICP-MS | 1 ppb |
| Potassium (K) | ICP-MS | 1 ppb |
| Calcium (Ca) | ICP-MS | 1 ppb |
| Iron (Fe) | ICP-MS | 1 ppb |
| Copper (Cu) | ICP-MS | 1 ppb |
| Zinc (Zn) | ICP-MS | 1 ppb |
| Aluminium (Al) | ICP-MS | 1 ppb |
Filtration at point-of-use is not a substitute for incoming quality control. In high-volume 300 mm facilities, the solvent is recirculated through 0.05 μm polytetrafluoroethylene membranes inside stainless steel pressure vessels, but cation leaching from 316L electropolished stainless steel remains a boundary condition. Published data for extended recycling beyond 72 h with this specific electronic-grade IPA is limited; batch-to-batch moisture variation above 0.08% has been observed in unheated cleanroom storage when container headspace nitrogen blanketing is interrupted.
In OLED frontplane fabrication, fine metal masks accumulating organic residues and low-molecular-weight organic deposition by-products are cleaned in multi-mask immersion tools or single-mask scrubbers. The electronic-grade IPA is applied undiluted at an assay of 99.9% to prevent solvent drag-out from leaving non-volatile residues; no water dilution is used in the first pass because residual moisture in mask apertures produces outgassing defects during subsequent vacuum evaporation. A two-stage mask cleaning sequence consists of 40 kHz ultrasonic immersion at 28 °C for 20 min, followed by a 0.2 μm filtered IPA spray rinse at 0.2 MPa. The cleaned mask is dried with filtered nitrogen at 50 °C for 60 s. Terminal components are fine metal masks with aperture widths from 20 μm to 50 μm, used in RGB stripe OLED deposition. Compared with acetone-based cleaning, electronic-grade IPA reduces metal cation carryover because water content is controlled below 0.1% and evaporation residue is limited to 5 ppm when tested per ASTM D1353. The cleaning tanks are exhausted to maintain vapour concentration below 25% of the lower explosive limit; the flash point of the solvent is 12 °C. The process is incompatible with open-top degreaser conversions because the flash point falls within normal cleanroom ambient, and is also incompatible with natural rubber transducer gaskets; ethylene propylene diene monomer or polytetrafluoroethylene seals are required.
Post-reflow defluxing of high-density interconnect assemblies using electronic-grade IPA is performed after Pb-free SAC305 soldering, where tin-copper intermetallic growth leaves polar rosin residues and organic acid activators. For automated stencil underwipe, a 70:30 volumetric blend of electronic-grade IPA and deionized water is sprayed at 0.35 MPa onto the underside of 0.12 mm thick laser-cut stencils; wipe roll speed is set to 50 mm/s with a relative board transfer rate of 0.3 m/s. The final rinse uses undiluted 99.9% IPA to remove the water-IPA mixture from low-standoff quad flat no-lead packages. The terminal boards are 0.4 mm pitch ball grid array designs with embedded passives, conformally coated after cleanliness verification. Ionic cleanliness is measured by resistivity of solvent extract per IPC-TM-650 2.3.25, with an acceptance threshold of 1.56 μg/cm² sodium chloride equivalence for Class 3 high-reliability assemblies under J-STD-001H. Bottom termination standoff below 0.1 mm limits capillary penetration; spray-only cleaning leaves flux at the die edge, so immersion in 99.9% IPA at 30 °C with 40 kHz ultrasonic agitation is required for residue dislodgement. That immersion process is not suitable for assemblies containing MEMS microphones or unsealed quartz oscillators because ultrasonic cavitation alters proof-mass dynamics. Vapour extraction must provide at least 10 air changes per hour and trigger alarm at 10% of the lower explosive limit in the wash section.
Optical end-face contamination is removed with 99.9% electronic-grade IPA dispensed onto lint-free cleanroom wipes at a controlled dose of 0.5 mL per 2.5 mm ferrule interface. The process is used on LC and MPO connectors before insertion into optical backplanes. Cotton-tipped swabs are excluded because lint particles above 1 μm cause insertion loss after mating. In production-scale fiber optic cable assembly, a semi-automated cassette cleaner applies 0.2 μm filtered IPA spray at 0.15 MPa for 3 s. The cleaned ferrule is inspected under 400× magnification to IEC 61300-3-35. The terminal product is a polished zirconia ferrule with maximum insertion loss of 0.5 dB and return loss below −40 dB for single-mode UPC configurations. Published data for high-power laser fiber terminations using this specific electronic-grade IPA is limited; direct spliced end-cap cleaning above 1 W output requires residue extraction testing beyond standard end-face inspection.
Hard disk drive media substrates are wiped with electronic-grade IPA immediately before sputtering of soft magnetic underlayers. The process uses automated linear wipe modules with spunlace polyester wipes; each 95 mm aluminium substrate receives 0.3 mL of 0.1 μm filtered IPA. The wipe head traverses radially at 20 mm/s under 0.05 MPa contact pressure. The acceptance criterion for particle adders is less than 0.1 particles/cm² at a 0.5 μm detection limit, verified by laser surface scanner. Terminal product is a perpendicular magnetic recording disk with a cobalt-chromium-platinum recording layer deposited by direct current sputtering. The operational boundary is strict: open-top solvent trays are not used because IPA water uptake from cleanroom air above 55% relative humidity raises the final water content above 0.1%, leaving drying stains on the substrate. Wipe lot change intervals are based on nonvolatile residue data rather than visual cleanliness; a rise in evaporation residue above 5 ppm per ASTM D1353 triggers wipe lot rejection.
After alkaline texturing of Czochralski silicon wafers in potassium hydroxide solution, organic surfactant residues from the texturing bath are removed by a 99.9% electronic-grade IPA rinse before phosphorus oxychloride diffusion. In production-scale inline wet benches, the wafers are sprayed with IPA at 0.25 MPa for 10 s per 156 mm pseudo-square wafer while rotating at 600 rpm. The rinse is followed by hot deionized water at 60 °C and infrared drying. The terminal product is a screen-printed silver front-contact cell with tab adhesion pull strength maintained above 2 N/mm. The IPA rinse is incompatible with heavily damaged saw-damage zones because solvent attack on residual slurry oils can redeposit hydrophobic films on wafer edges; pre-cleaning with potassium hydroxide at 80 °C is required before the IPA step. Published data for this specific rinse step in heterojunction cell fabrication is limited; in those configurations, a solvent-free hot deionized water rinse may be used if organic surfactant levels in the texturing bath are below 0.1% by volume.
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Zhejiang Xinhua Chemical Co., Ltd. supplies electronic-grade isopropyl alcohol (2-propanol; CAS 67-63-0) as a low-residue process solvent for semiconductor wafer finishing, flat-panel display cleaning, and precision optics degreasing. The product is not assigned a universal model code in public technical documentation; procurement requires the chemical identity, electronic-grade classification, final filtration rating, and packaging configuration. Lot traceability is maintained through the manufacturer’s batch number and certificate of analysis, which reports purity by GC-FID, water by Karl Fischer titration, trace cations by ICP-MS, and residual particles after membrane filtration. In wafer fabrication, the solvent is introduced after ultrapure water rinsing to reduce water spotting and support Marangoni drying in single-wafer tools. It is used as a rinse and drying aid rather than as a replacement for RCA-1 or RCA-2 cleaning chemistry.
Release testing for this solvent class is normally aligned to SEMI C21, with individual manufacturers applying tighter lot-specific limits where downstream defect budgets require. The table below summarizes the control parameters typically found on electronic-grade IPA certificates of analysis; actual values for a given Zhejiang Xinhua lot are documented on the CofA and should be checked against the process qualification value.
| Parameter | Typical electronic-grade release window | Analytical method or standard | Primary process risk if out of limit |
|---|---|---|---|
| Assay, isopropanol | ≥99.8% w/w | GC-FID area normalization | Non-target solvent residues remain on device features |
| Water | ≤0.05% w/w | ASTM E203 | Spotting, incomplete drying, metal corrosion |
| Residue after evaporation | ≤5 ppm | ASTM D1353 | Nonvolatile films create defects after spin-off |
| Acidity, as acetic acid | ≤0.001% w/w | ASTM D1613 | Localized pH shift on wafer surfaces |
| Chloride | ≤0.05 ppm | Ion chromatography, SEMI C21 | Metal line pitting and mobile ion contamination |
| Critical trace metals, each | ≤10 ppb | ICP-MS | Threshold voltage drift from Na, K, Ca, Fe |
| Particles ≥0.2 µm | ≤10 particles/mL | Laser particle counting | Additive defect density on patterned wafers |
A limit that is out of specification does not necessarily render the solvent unusable; the decision depends on the device node and cleaning step. Chloride limits become more restrictive at advanced interconnect nodes because chlorine-containing residues can accelerate localized corrosion of exposed copper seed lines. Residue after evaporation above 5 ppm is a common root cause of post-drying haze in high-volume wafer fabs, especially where batch immersion tools have accumulation in the vapor zone. Published data for this specific Zhejiang Xinhua configuration is limited, but the general failure modes are well established across electronic-grade IPA lots.
Metal impurities in electronic-grade IPA are controlled in the single-ppb range because alkali and alkaline-earth cations are mobile under bias-temperature stress. Sodium and potassium can migrate along interfaces and shift threshold voltage in transistor structures; iron and copper can reduce minority carrier lifetime and participate in dark-current leakage in optical devices. ICP-MS is used because it provides detection limits below 0.1 ppb for most cations, allowing a release laboratory to quantify contaminants far below the level that will cause yield loss. The final filtration step, typically a 0.1 µm or 0.2 µm membrane, removes particles but does not remove dissolved ions; therefore filtration alone is not a substitute for chemical purification and clean packaging.
In single-wafer cleaning equipment, Marangoni drying uses a surface-tension gradient to pull rinse water away from high-aspect-ratio features. Isopropanol reduces the surface tension of the liquid film; at 20 °C, surface tension is approximately 21.7 mN/m compared with 72.8 mN/m for water. The IPA vapor is introduced through a nozzle or a static vapor chamber, condenses at the meniscus, and creates a lower-surface-tension region that displaces the water film from trenches and vias. The process is used after RCA-2 or dilute HF rinsing at the back-end of cleaning. The wafer is not immersed in liquid IPA but exposed to a controlled vapor flux, so vapor purity and particle content matter as much as bulk liquid composition.
Residual water is removed by the IPA-water azeotrope, which boils near 80.4 °C at approximately 87.7 wt% IPA. This azeotropic behavior is distinct from acetone or methanol drying aids because the lower boiling point of the water-IPA mixture accelerates vaporization while leaving minimal nonvolatile residue. Batch vapor dryers maintain liquid IPA at 75–85 °C to generate saturated vapor; the cooler wafer cassette condenses the vapor and rinses the surface. Tool-specific defect data for the exact Zhejiang Xinhua product is limited, but the general process window is sensitive to IPA vapor flow, water content, and bath contamination.
At advanced nodes, particle counts above 10 particles/mL at 0.2 µm correlate with increased pattern collapse after drying; some fabs set line-specific incoming limits below the generic SEMI C21 value. Purity of the vapor is also affected by headspace nitrogen. Without inerting, ambient moisture uptake can raise water content by 0.02–0.05% over repeated drum opening in humid air. The material should therefore be dispensed through a closed-loop nitrogen-blanketed line wherever point-of-use water content is critical.
A comparison between electronic-grade, technical-grade, and reagent-grade isopropyl alcohol reveals that the electronic product is distinguished less by nominal assay than by controlled impurity levels and packaging. Technical-grade IPA may also assay above 99%, but that value does not quantify water, trace metals, nonvolatile residue, or particle load. Electronic-grade material is controlled for all four categories simultaneously and is filled in dedicated cleanroom containers. A practical distinction in semiconductor use is that technical-grade material can carry dissolved ions and particulate matter that survive evaporation and remain on device surfaces. The following comparison uses representative release windows for industrial and electronic grades; lot-specific certificates govern actual acceptance.
| Parameter | Electronic-grade IPA | General-purpose industrial IPA |
|---|---|---|
| Assay | ≥99.8% w/w | ≥99.0% w/w |
| Water | ≤0.05% w/w | ≤0.2% w/w |
| Residue after evaporation | ≤5 ppm | often not specified or ≤10 ppm |
| Trace metals | single-ppb range by ICP-MS | ppm-range total heavy metals may be reported |
| Final filtration | 0.1–0.2 µm membrane | not a standard requirement |
| Packaging | cleanroom HDPE or fluoropolymer, nitrogen headspace | standard steel or HDPE without cleanroom fill |
Packaging configurations for electronic-grade IPA vary by regional distributor and fab requirement. Typical containers include 1 L, 2.5 L, and 5 L fluoropolymer bottles with inert caps, as well as 200 L cleanroom drums for bulk distribution. Published data for the specific cleanroom classification of the Zhejiang Xinhua filling line is limited; semiconductor fabs commonly require the supplier to certify that containers are triple-rinsed with high-purity solvent and leak-tested before shipment. The choice of container liner matters because low-density polyethylene can contribute extractable organics over prolonged storage; fluoropolymer or high-density polyethylene liners reduce this source of contamination. Drums are often blanketed with dry nitrogen and fitted with pressure/vacuum relief valves to prevent ambient moisture ingress. If the material is transferred through non-passivated stainless steel lines, iron can be extracted at low concentrations; electronic-grade IPA is therefore sampled at the point of use for iron and other transition metals.
Direct substitution of electronic-grade IPA in a process qualified with technical-grade solvent must include an incoming inspection protocol, not merely a change in procurement code. The electronic-grade product is filtered and dried to tighter limits, but site-specific storage conditions can degrade this condition after delivery. If the material is transferred from cleanroom packaging into a non-dedicated pressure vessel or open bath, it can acquire moisture and particulate contamination that negate the grade advantage. In a high-humidity environment above 60% RH, water uptake from the headspace can exceed 0.05% within several hours when containers are left open; the material should be blanketed with nitrogen or transferred through a closed-loop dispense line.
Material compatibility follows the same constraints as ordinary isopropanol. The flash point is 12 °C closed cup according to ASTM D56; storage in a flammable-liquid cabinet with grounding and ventilation is required. Equipment must be rated for the vapor concentration used, because the lower flammable limit is approximately 2% by volume in air. The solvent should not be blended with strong oxidizers or with unstabilized halogenated solvents unless the specific process and exhaust train are designed for the thermal decomposition products. Electronic-grade IPA is used in vapor-phase, immersion-rinse, and manual-wipe applications. In vapor dryers, the bath is typically held at 75–85 °C; in manual-wipe applications, the solvent is dispensed from a polypropylene squeeze bottle or a sealed cleanroom wipe station. The evaporation rate is lower than acetone and higher than n-butyl acetate; this moderate evaporation rate allows a final rinse film to drain evenly rather than flash-dry and leave residue.
