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Sumitomo Chemical Isopropyl Alcohol Electronic Grade

    • Product Name: Sumitomo Chemical Isopropyl Alcohol Electronic Grade
    • Factroy Site: Binhai New Area, Tianjin, China
    • Price Inquiry: sales4@ascent-chem.com
    • Manufacturer: Ascent Petrochem Holdings Co., Limited
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    Specifications
    HS Code 753732
    Purity 99.9% min
    Water Content 100 ppm max
    Specific Gravity 20 20 C 0.785 - 0.787
    Boiling Point 82.4°C
    Evaporation Residue 5 ppm max
    Acidity As Acetic Acid 10 ppm max
    Color Apha 10 max
    Assay Gc 99.9% min
    Non Volatile Matter 5 ppm max
    Electrical Conductivity 0.5 µS/cm max

    As an accredited Sumitomo Chemical Isopropyl Alcohol Electronic Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.

    Packing & Storage
    Packing Packaged in high-purity sealed drums or bottles, available in 20L quantities for electronics-grade isopropyl alcohol, ensuring contamination-free use.
    Container Loading (20′ FCL) Container loading: 20′ FCL for Sumitomo electronic-grade IPA. Use clean, dry container, secure packaging, avoid contamination, follow safety labels.
    Shipping Sumitomo Chemical Isopropyl Alcohol Electronic Grade ships as a flammable liquid (UN1219, Class 3) in sealed, contamination-free drums or IBCs. Transport requires proper hazmat labeling, grounded equipment, and ventilation. Keep away from heat, sparks, and oxidizers. Ensure secure upright loading and complete documentation for safe, compliant delivery.
    Storage Store Sumitomo Chemical Isopropyl Alcohol Electronic Grade in a clean, cool, dry, well-ventilated area, tightly sealed in original containers to prevent moisture and particulate contamination. Keep away from heat, sparks, open flames, and incompatible oxidizers. Use earthing/grounding to avoid static discharge. Avoid direct sunlight; maintain container integrity and proper labeling. Follow local flammable-liquid storage regulations.
    Shelf Life Shelf life is typically 24 months from manufacture date when stored sealed in the original container under recommended conditions.
    Application of Sumitomo Chemical Isopropyl Alcohol Electronic Grade

    Slurry Aggregate Removal in Copper and Low-k Post-CMP Single-Wafer Spray Processing

    Sumitomo Chemical electronic-grade isopropyl alcohol is metered into the final rinse path of 300 mm single-wafer spray tools at a concentration between 70 vol% and 100 vol%, with the lower dilution band used in intermediate scrubber rinse tanks and the neat solvent reserved for the final spin dry step to reduce surface tension without leaving an evaporative residue. The addition ratio is not fixed by the fab; it is profiled against slurry zeta potential, topography aspect ratio after barrier removal, and the residual ceria or silica particle density detected on monitor wafers by dark-field inspection. In a typical copper/low-k line, an ultrapure water rinse at 1.0 L/min per wafer is switched to an IPA/UPW mixture through a point-of-use blending module. The cleaning sequence operates inside an ISO 14644-1 Class 2 ballroom and uses megasonic transducers at 950 kHz to 1.4 MHz to reduce boundary-layer particle reattachment without inducing copper corrosion. Because the electronic-grade material conforms to SEMI C21-0301, sodium, calcium, and iron do not accumulate on exposed low-k surfaces or shift the flatband voltage of subsequent transistor structures. The downstream production process is a post-CMP brush scrubber and spin rinse platform, not a wet bench: abrasive slurry residues are first dislodged by PVA brushes under 3 N to 8 N downforce, then rinsed with diluted IPA, and finally dried by Marangoni IPA vapor at the wafer edge. Terminal processed products include 300 mm logic devices with copper interconnects, 3D NAND memory wafers, CMOS image sensor wafers, and power management IC wafers that require sub-0.3 µm particle neutrality before dielectric cap deposition. One operational boundary is the closed-cup flash point of IPA at 12°C; therefore the blending skid and exhaust path must be rated to ATEX Zone 2, and the process must not exceed 40°C in the spill-containment plenum. Where a fab substitutes lower-purity technical IPA, ion chromatograph data show elevated sodium, potassium, and chloride that migrate into porous ultra-low-k films and contribute to voltage ramp breakdown failures.

    OLED and LTPS backplane substrate cleaning lines in Gen 8.5 fabs receive electronic-grade isopropyl alcohol as the terminal rinse solvent after aqueous detergent and UV-ozone stages, typically at 70 vol% to 85 vol% in the first cascade tank and neat 99.9% in the final air-knife rinse zone. The formulation is blended point-of-use with 18.2 MΩ·cm DI water, and conductivity of the blended stream is monitored at 0.1 µS/cm maximum; the ratio is reduced if the glass surface shows haze at the downstream ellipsometer. The applicable compliance framework includes ISO 14644-1 Class 5 for the substrate cleaning cleanroom, SEMI C21-0301 for solvent quality, and a fab internal particle specification of fewer than 25 particles/mL at 0.3 µm for the drain line. Production equipment comprises an ultrasonic immersion tank operated at 40 kHz and 2.5 W/cm², followed by a high-velocity air knife at 180 m/s to strip solvent from the glass edge, and then low-pressure IR drying. The terminal product types include rigid AMOLED panels for mobile receivers, LTPS TFT-LCD motherglass for automotive displays, and QD-OLED display modules where organic defect density must remain below the panel assembler’s acceptance limit. The critical operational limitation is that IPA must not be applied to polyimide varnish substrates above 40°C because excessive solvent sorption alters the PI coefficient of thermal expansion and later contributes to mura under thermal cycling. Published data for this specific configuration is limited outside equipment vendor technical bulletins; the temperature ceiling is derived from polyimide film compatibility data rather than from a universal IPA process standard.

    Why Does Lead-Free Reflow Defluxing Demand Halide-Limited Solvent Control?

    In electronics manufacturing services, automated understencil cleaning and post-reflow defluxing use electronic-grade IPA at 90 vol% to 100 vol% in spray applicators and stencil wipe systems, with the lower concentration applied where additional water assists in removing hygroscopic flux salts and the higher concentration used to dissolve rosin/co-resin residues from lead-free SAC305 profiles. The compliance boundary is IPC J-STD-001 for flux removal and IPC-A-610 for board acceptance; after IPA cleaning, boards are tested according to IPC-TM-650 2.3.25 with a limit of 1.56 µg/cm² sodium chloride equivalent for ionizable contamination. The addition ratio is not intended as a bulk bath formulation because IPA is mostly applied neat from a pressurized canister or pre-saturated wipe; the percentage is controlled by dilution with DI water in automated stencil clean cycles, where 10% water assists in removing flux salts that rosin encapsulates. The production process is an understencil cleaner integrated into solder paste printers and a batch or inline defluxing module after reflow; PCBAs are exposed to a 0.6 MPa compressed dry air knife after solvent application, while ionograph extraction from the post-wash boards confirms the surface concentration. Terminal assembled boards from this process include automotive engine control units, industrial servo drives, medical monitoring electronics, and high-layer-count router boards where electrochemical migration from trapped flux activators would otherwise degrade insulation resistance. The process is incompatible with installed conformal coatings that are not IPA-tolerant; in particular, certain acrylate and silicone coatings soften or whiten on contact, so a spot test on a non-functional coupon is required before full-line adoption. Additionally, the 12°C closed-cup flash point imposes local exhaust ventilation of 1.0 m/s capture velocity at the open stencil cleaning station, and storage must follow NFPA 30 flammable liquid cabinet requirements.

    Hard disk drive substrate lines use electronic-grade IPA in cassette immersion and vapor degreasing tools before sputtering the magnetic layer stack; the solvent is charged neat at 99.99% by GC area, and the liquid is replaced by batch to avoid residue accumulation. The process operates in an ISO 14644-1 Class 5 cleanroom, and solvent quality is verified against SEMI C21-0301 plus an internal GC-MS scan for non-volatile residue below the certificate limit. In the production sequence, aluminum or glass platters pass through multiple ultrasonic tanks at 40 kHz, 68 kHz, and 80 kHz in a cascade; final vapor degreasing uses the boiling point of IPA at 82.5°C in a closed-loop degreaser with a freeboard ratio of 0.75 to prevent solvent carryover. The terminal product types are 2.5-inch and 3.5-inch magnetic media for enterprise drives, heat-assisted magnetic recording disks, and glass platters for ultra-thin client HDDs. A non-negotiable limitation is that IPA is applied only before perfluoropolyether lubricant deposition; if IPA contacts a finished lubricated disk, it extracts the boundary lubricant and increases head-disk interface wear, so the cleaning and lube application lines are physically isolated in separate air handling zones. Another limitation is water content: because IPA is hygroscopic, open baths above 40% ambient relative humidity absorb moisture and become unsuitable for water-sensitive underlayer adhesion, requiring either closed dry-nitrogen blanketing or continuous molecular sieve polishing.

    When Edge Bead Removal Solvent Cation Levels Shift Photoresist Scumming in 300 mm Tracks

    In photolithography coater tracks, electronic-grade IPA is metered into edge bead removal and backside rinse systems as a co-solvent at 5 vol% to 20 vol% of the EBR solvent mixture, while the backside rinse may use a higher IPA content up to 100% depending on wafer handling and adhesion of the previous layer. The EBR mixture is dispensed through a needle at 0.5 mL/s to 2.0 mL/s along the wafer edge during spin at 1,200 rpm to 3,000 rpm, and the dissolved edge bead is pulled into the coater cup drain by centrifugal force. The applicable standard for the IPA raw material is SEMI C21-0301; further trace metal limits are derived from the photoresist manufacturer’s qualification because alkaline metal contamination at the edge boundary can create T-topping, foot lift, and post-etch residue. The production process is fully automated within a 300 mm track linked to an ISO 14644-1 Class 3 wafer environment, and the drain line is continuously sampled for sodium, potassium, calcium, iron, and zinc by ICP-MS under supplier change control. Finished product types from lithography cells using this process include advanced logic devices, DRAM memory, silicon photonics wafers, and image sensor wafers where edge defect density directly limits gross die yield. The main incompatibility is with certain EUV underlayers and metal-oxide resist films; uncontrolled IPA evaporation from the EBR tip can chill the wafer edge below the dew point and cause micro-condensation, so the track cup exhaust and EBR nozzle temperature are maintained above 21°C and below the flash point control band. Where an unqualified technical IPA tank is introduced, batch records show an intermittent particle signature at the wafer edge after etch that is traced to sulfate and nitrate residues from neutralization of cation carryover; therefore only the dedicated electronic-grade material is allowed in EBR day tanks.

    Photomask blank cleaning for reticles and nanoimprint templates uses electronic-grade IPA as the final solvent decap step after acid piranha and alkaline cleaning of chromium, molybdenum silicide, and quartz blanks. The solvent is applied neat at 99.9% through a PTFE spray bar at 0.3 MPa to 0.5 MPa and then removed by a nitrogen purge at 0.55 MPa; the addition ratio is not diluted because any UPW carryover would create inorganic residue on the patterned surface after pellicle mounting. The process is verified by SEMI C21-0301 raw solvent compliance, ISO 14644-1 Class 4 reticle handling, and surface particle measurement on a leading-edge mask inspection tool at 0.15 µm sensitivity. The cleaning occurs in a single-wafer spin processor with a chuck speed of 1,500 rpm during rinse and 3,000 rpm during dry, followed by a soft bake at 80°C to 90°C to desorb trace solvent from the quartz bulk. Terminal products include binary chrome masks, phase-shift masks used at 193 nm immersion lithography, EUV multilayer mask blanks, and nanoimprint lithography templates used for photonic device replication. One limitation is that IPA must be filtered through a 0.05 µm PTFE filter at point of dispense because the solvent can loosen pre-existing particles from plumbing and redeposit them as a defect map on the reticle surface. Another limitation is that molybdenum silicide surfaces become water-sensitive after etch; a neat IPA final rinse suppresses water spotting but cannot repair molybdenum oxide thickness shifts already created by an aggressive alkaline step.

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    Certification & Compliance
    More Introduction

    Sumitomo Chemical Isopropyl Alcohol Electronic Grade is a high-purity isopropanol solvent used in wafer drying, post-etch rinse, and display-glass cleaning operations. The product is identified by CAS 67-63-0 and UN 1219. The electronic-grade designation serves as the model/grade identifier for procurement specifications; regional production codes may appear on certificate-of-analysis documents. The standard electronic-grade variant is commonly supplied with water content not exceeding 100 ppm, and a drying-grade variant is supplied with water content not exceeding 50 ppm for Marangoni drying tools. Packaging includes 18 L stainless-steel canisters, 200 L fluoropolymer-lined drums, and bulk containers with nitrogen blanketing. Lot release uses gas chromatography with flame ionization detection for assay, Karl Fischer titration for moisture, inductively coupled plasma mass spectrometry for trace metals, and liquid optical particle counting for particles. Numerical limits in public supply contracts are generally benchmarked to SEMI C21; the lot certificate governs all acceptance decisions.

    What Distinguishes Electronic-Grade IPA from Reagent and Technical Grades?

    Reagent-grade IPA is not formulated for sub-100 ppb trace-metal control. ACS reagent isopropyl alcohol may have assay above 99.5%, but the monograph does not specify transition metals, sodium, potassium, or particles at semiconductor-relevant levels. Technical-grade IPA can contain water above 0.1 wt%, non-volatile residue above 50 ppm, and extractable organic impurities. Electronic-grade IPA differs by restricting mobile ions and transition metals to ≤10 ppb per element by ICP-MS, limiting water to ≤100 ppm or ≤50 ppm depending on grade, and controlling particles ≥0.5 μm to ≤25 particles/mL. Table 1 compares typical purity profiles across grades.

    Table 1. Comparative purity profile for electronic, reagent, and technical IPA grades
    Property Test Method Electronic Grade Typical Reagent Grade Typical Technical Grade Typical
    Assay by GC-FID gas chromatography with flame ionization detector ≥99.99% area ≥99.5% ≥99.0%
    Water ASTM E203-16 Karl Fischer titration ≤100 ppm ≤2000 ppm ≤5000 ppm
    Non-volatile residue ASTM D1353-13 ≤5 ppm ≤5 ppm ≤50 ppm
    Chloride ion chromatography after aqueous extraction ≤0.1 ppm not specified not specified
    Sodium, potassium ICP-MS after evaporation pre-concentration ≤10 ppb each not specified not specified
    Iron, copper, zinc ICP-MS after evaporation pre-concentration ≤10 ppb each not specified not specified
    Particles ≥0.5 μm liquid optical particle counting ≤25 particles/mL not specified not specified

    Values in Table 1 are not lot guarantees. They represent commonly used acceptance windows for semiconductor-grade IPA; a specific lot certificate takes precedence.

    Across semiconductor front-end manufacturing, the highest-purity use is water replacement during final drying of patterned wafers. The surface tension of water is 72.8 mN/m at 20 °C; the surface tension of dry isopropanol is 21.7 mN/m at 20 °C. In a Marangoni dryer, IPA vapor condenses at the rinse-water meniscus and creates a concentration-dependent surface-tension gradient that pulls liquid out of trench and via structures. The capillary pressure driving pattern collapse scales with surface tension and inverse feature width. If the solvent contains excessive water, the effective meniscus surface tension increases and the drying gradient weakens. A water content increase from 50 ppm to 5000 ppm can raise the measured surface tension of the liquid phase by several mN/m; the exact shift depends on temperature and film composition. This is why technical IPA, despite its high GC assay, is unsuitable for advanced drying. On production-scale single-wafer tools, IPA is heated to 60–80 °C and mixed with nitrogen at a nozzle pressure of 0.2–0.5 MPa; tool-specific recipes differ. Point-of-use filtration uses hydrophobic PTFE membranes rated at 0.1–0.2 μm. Field data from semiconductor fabs show that moisture ingress through open canister vents is a common source of intermittent watermark defects. Canister headspace is therefore purged with nitrogen to ≤0.5 vol% oxygen before use. The product is not a replacement for aqueous SC-1 or SC-2 cleaning, and it does not dissolve inorganic fluoride residues or metal oxides.

    Residue Control in Conductor Etch Rinsing

    Post-etch residue rinsing on copper and aluminum interconnect structures requires a solvent that does not add non-volatile organic residue or metal ions. The non-volatile residue limit of ≤5 ppm prevents the deposition of residual material on metal lines after spin-off. Sodium and potassium are restricted because they are mobile ions that shift transistor threshold voltage; iron and copper degrade minority carrier lifetime when left on silicon or dielectric surfaces. At 10 ppb concentration, 1 kg of solvent introduces approximately 10 μg of the impurity element into the wafer environment. Technical IPA containing ppm-level iron or sodium can therefore introduce orders of magnitude more contamination. Electronic-grade IPA is used as a rinse and drying solvent after dedicated post-etch residue removers; it does not replace acidic or alkaline stripper formulations.

    Compared with electronic-grade methanol and acetone, isopropanol provides a different evaporation and surface-tension profile. At 20 °C, surface tension values are 21.7 mN/m for isopropanol, 22.6 mN/m for methanol, and 23.3 mN/m for acetone. Isopropanol vapor pressure is 4.4 kPa at 20 °C; methanol vapor pressure is approximately 12.8 kPa at the same temperature. This lower vapor pressure allows longer residence time on the wafer surface and reduces evaporative cooling, which is useful in controlled Marangoni drying. Methanol and acetone may dry faster but have higher toxicity or stronger solvent odor profiles that are less desirable in production cleanrooms. The selection is not based on surface tension alone; residue, water, and ionic purity specifications also control final defect counts.

    For solvent wipe cleaning of non-product-contact equipment surfaces, technical-grade IPA is sufficient; the electronic-grade product is not required.

    Incoming quality control for high-volume semiconductor manufacturing includes verification of water by Karl Fischer titration, trace metals by ICP-MS, and particles by light obscuration. Because the analytes are near the quantitation limits of many instruments, blank correction and cleanroom handling are required; ambient sodium from cleanroom gloves or laboratory dust can dominate a 10 ppb sodium measurement if evaporation is not performed in a filtered environment. ICP-MS instruments with collision or reaction cell technology are used to reduce polyatomic interferences when quantifying iron and copper. Water analysis is performed by coulometric or volumetric Karl Fischer titration according to ASTM E203-16 or equivalent. Gravimetric non-volatile residue is determined by evaporation in a platinum dish at 105–110 °C under nitrogen. Published data for the specific Sumitomo Chemical product on advanced-node device structures is limited; wafer-level qualification with laser surface inspection and vapor phase decomposition ICP-MS is used to verify cleaning performance.

    In flat-panel display fabrication, electronic-grade IPA is used as a final rinse before sputter deposition. Particle control remains critical because particles on glass can become visible mura defects after conductive film deposition. The non-volatile residue limit is important because residual organic films interfere with indium-tin oxide adhesion. Large glass substrates generate non-uniform evaporation at the edges if exhaust flow is too high; process engineers typically balance dryer exhaust to avoid edge cooling and condensation. IPA supply lines in display fabs are often insulated and maintained at 25–30 °C to avoid moisture uptake on humid days. Tool-specific flow rates are established by rinse uniformity tests; published data for this specific Sumitomo product on display panel manufacturing is limited.

    If IPA Is Routed Through Common Solvent Lines, What Cross-Contamination Mechanisms Occur?

    Shared distribution systems can contaminate electronic-grade IPA by extracting plasticizers from elastomer seals, by back-streaming pump oil, and by exposing the solvent to residual process chemistries. In semiconductor fabs, electronic-grade IPA is commonly transported through 316L stainless steel or PFA lines with orbital welds and minimal dead legs. Wetted components use PTFE or PFA because IPA can swell EPDM and natural rubber, causing particle release and organic extractables. Point-of-use filtration with 0.05–0.2 μm low-extractable membrane filters is installed after pump delivery. If a distribution line has previously carried N-methyl-2-pyrrolidone, acetone, or alkaline strippers, flushing with electronic-grade IPA may not remove strongly adsorbed residues; a dedicated line or validated solvent-change procedure is required.

    Storage and handling require fire-rated solvent cabinets, grounding, explosion-proof ventilation, and nitrogen inerting. The closed-cup flash point of isopropanol is 12 °C; vapor pressure at 20 °C is approximately 4.4 kPa. Flammable vapor limits in air are approximately 2–12 vol%. Occupational exposure limits are 400 ppm 8-h TWA under the US OSHA PEL and 200 ppm 8-h TWA under the ACGIH TLV. Use of unlined mild steel for storage is not recommended because acidic impurities or water can initiate corrosion and contaminate the solvent. The product is not intended for pharmaceutical, food-contact, or cosmetic use. Disposal is as flammable solvent waste under local regulations.