| HS Code | 157756 |
| Product Name | Resonac Isopropyl Alcohol Electronic Grade |
| Manufacturer | Resonac Corporation |
| Chemical Formula | (CH3)2CHOH |
| Cas Number | 67-63-0 |
| Molecular Weight | 60.10 g/mol |
| Purity | ≥99.99% |
| Water Content | ≤0.01% |
| Evaporation Residue | ≤5 ppm |
| Acidity | ≤1 ppm |
| Appearance | Clear colorless liquid |
| Specific Gravity At 20 20 C | 0.785 |
| Boiling Point | 82.4°C |
| Flash Point | 11.7°C |
| Refractive Index At 20 C | 1.377 |
As an accredited Resonac Isopropyl Alcohol Electronic Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Resonac Isopropyl Alcohol Electronic Grade is supplied in 18-liter steel cans or 200-liter drums with sealed, purity-preserving closures. |
| Container Loading (20′ FCL) | 20′ FCL: drums of Resonac electronic-grade IPA loaded, secured, and containerized per hazardous chemical transport regulations. |
| Shipping | Resonac Isopropyl Alcohol Electronic Grade is a flammable liquid (UN1219, Class 3, Packing Group II), requiring hazardous materials packaging, labeling, and transport documentation. Ensure leak-proof, grounded containers, secure upright loading, and segregation from oxidizers. Handle per IMDG/ADR/IATA regulations to maintain purity and safety. |
| Storage | Store in tightly sealed, approved containers in a cool, dry, well-ventilated area away from heat, sparks, and open flames. Keep protected from moisture and contamination to preserve electronic-grade purity. Use grounded bonding equipment, and segregate from incompatible oxidizers. Label clearly, and follow all local flammable-liquid storage regulations. |
| Shelf Life | Shelf life is 24 months from manufacture when stored unopened in original container under recommended conditions. |
In front-end-of-line (FEOL) single-wafer cleaning for 300 mm wafers, Resonac Isopropyl Alcohol Electronic Grade is applied after sulfuric acid/hydrogen peroxide clean, SC-1, SC-2, and overflow ultrapure water rinse. The solvent is held to SEMI C21 electronic-grade IPA criteria, with water content below 0.1% w/w, trace metal ceilings below 1 ppb per element, and chloride below 50 ppb when tested per ASTM D512; the chloride limit is critical because residual halide transfers into the subsequent hexamethyldisilazane (HMDS) priming step and creates resist adhesion variability. For the final rinse, the material is used neat at 99.9% w/w, while Marangoni dryer injection uses vaporized IPA in nitrogen at 1.5–4.0 vol%. The surface tension difference between IPA at 21.7 mN/m and water at 72.8 mN/m at 25°C drives the meniscus gradient that displaces water from high-aspect-ratio lines and contact holes without thermal expansion damage.
The production process includes batch immersion dryers for 50-wafer cassettes or single-wafer spin rinse dryers with a final low-speed drying step below 80°C. Batch-to-batch variance is controlled by dry nitrogen blanketing of 200 L drums; once drum headspace water uptake raises IPA water content above 0.1% w/w, the Marangoni gradient weakens, and watermark defects on gate oxide surfaces become statistically significant. On production lines running 28 nm and below nodes, the IPA injection rate is trimmed according to wafer center-to-edge contact angle uniformity, with ellipsometric porosity data used to confirm that low-k dielectric films have not retained solvent after the rinse. IPA is not a photoresist stripper or post-etch residue remover; high-dose DUV resist and TiN hard mask residues require ozonated water or plasma strip before the IPA rinse can reduce defect density.
The terminal finished products include logic wafers, DRAM, 3D NAND, and CMOS image sensor devices where surface preparation directly affects gate oxide integrity and contact resistance. In stacked 3D NAND, the same drying step is used after through-silicon via cleaning, with the limitation that high-porosity low-k sidewalls can retain IPA vapor unless the spin dryer ramp is extended by 15–20 s.
A sixth-generation AMOLED backplane line that omits a low-metal IPA rinse before hexamethyldisilazane (HMDS) priming transfers sodium, calcium, and chloride residues from glass edge grinding modules into the polyimide varnish interface. In this application, Resonac Isopropyl Alcohol Electronic Grade is blended with 18.2 MΩ·cm ultrapure water at 70 vol% IPA for the low-pressure megasonic final rinse and at 90 vol% IPA for air-knife edge bead removal. The manufacturing environment is governed by ISO 14644-1 Class 5, and the solvent is specified to SEMI C21 electronic-grade limits. The sequence includes four-brush glass scrub, alkaline detergent rinse, overflow ultrapure water rinse, megasonic-assisted IPA/UPW rinse at 950 kHz, air-knife drying at 0.4–0.5 m/s air velocity, and HMDS vapor priming at 110°C for 60 s. Terminal outputs are flexible AMOLED modules, rigid OLED display panels, and micro-OLED displays; the IPA is removed before photoresist coating to prevent amine contamination of photosensitive polyimide and to avoid CD shift in the subsequent mask exposure.
Stiction after sacrificial oxide release in polysilicon MEMS remains the dominant yield loss when alcohol drying is performed without a controlled vapor-phase outlet. In vapor HF release lines, the wafer cassette is moved from 18.2 MΩ·cm rinse water into a chamber where Resonac Isopropyl Alcohol Electronic Grade is injected as vapor in nitrogen at 80–100°C; the IPA vapor concentration is held between 2 vol% and 6 vol%, and the chamber pressure is ramped from 760 Torr to 50 Torr to promote water displacement. The solvent meets SEMI C21 electronic-grade criteria, and the release area is maintained at ISO 14644-1 Class 5 with particle addition controlled at 0.1 µm or larger below 25 counts/mL.
The process sequence consists of sacrificial oxide etching, deionized water rinse, liquid IPA immersion, vapor IPA drying, and nitrogen purge; wafer carriers with hydrophobic silicon surfaces show lower water retention after liquid IPA immersion than after water-only transfer. The terminal outputs are accelerometers, gyroscopes, pressure sensors, and MEMS microphones. The operational boundary is that structures with aspect ratios above 15:1 remain at risk of capillary-induced stiction even after vapor drying, and published data for complete yield recovery in such geometries is limited.
High-density printed circuit board assemblies populated with 0201 passives and 0.4 mm pitch quad-flat no-lead packages transfer oscillatory spray-in-air of 70–90 vol% IPA in deionized water at 35–45°C to remove rosin-based flux residues from post-reflow soldering. The cleaning machine is a conveyorized ultrasonic spray unit with 40 kHz transducers and a rinse stage fed by 1–5 MΩ·cm deionized water; cleaning time is 90–180 s depending on board thermal mass. Acceptance criteria are IPC-TM-650 Method 2.3.25 for ionic cleanliness, with a pass threshold below 10 µg/cm2 NaCl equivalent, and J-STD-001H section 8.3 for process residue verification. Electronic-grade IPA is used as the sole solvent in the machine sump and is blended with deionized water to 70 vol% for the initial spray and 90 vol% for the final rinse, while stencil cleaning after solder paste replacement uses neat 99.9% w/w IPA. The output includes automotive engine control units, aerospace avionics boards, and 5G base station RF modules; the limitation is that highly activated or polymerized no-clean flux residues under low-standoff components may require a saponifier prewash because IPA alone has low solvency for some cross-linked flux matrices.
| Application | Governing standard / test method | Critical numerical threshold | IPA addition ratio |
|---|---|---|---|
| Semiconductor FEOL rinse and drying | SEMI C21, ASTM D512 | water 0.1% w/w max; chloride 50 ppb max | 99.9% w/w neat; vapor 1.5–4.0 vol% |
| AMOLED glass pre-cleaning | SEMI C21, ISO 14644-1 Class 5 | particle counts per SEMI C21 | 70 vol% final rinse; 90 vol% edge bead removal |
| MEMS release drying | SEMI C21, ISO 14644-1 Class 5 | water 0.1% w/w max | vapor 2–6 vol% in nitrogen |
| PCB flux residue removal | IPC-TM-650 Method 2.3.25, J-STD-001H | ionic residue 10 µg/cm2 NaCl eq max | 70–90 vol% IPA in deionized water |
| Fiber optic end-face cleaning | IEC 61300-3-35, ISO 10110-7 | end-face inspection pass per IEC 61300-3-35 | 99.9% w/w neat |
| Hard disk media water displacement | SEMI C21, ISO 14644-1 Class 5 | surface water 0.05% w/w max | 87.9 wt% azeotrope or 99.9% w/w neat |
For single-mode fiber connector end-faces polished with 1.25 mm ferrules, the final wet cleaning before fusion splicing or return-loss testing uses neat 99.9% w/w Resonac Isopropyl Alcohol Electronic Grade in single-use lint-free swabs. The cleanliness specification is IEC 61300-3-35 for end-face inspection and ISO 10110-7 for surface imperfection grading; the process is executed under ISO 14644-1 Class 5 or better. The terminal parts are LC, SC, and MTP/MPO connectors, planar lightwave circuit pigtails, and fiber-optic transceivers. Published data for production-scale wipe pressure and stroke count on 1.25 mm zirconia ferrules is limited; therefore the application relies on inspection-based acceptance rather than fixed mechanical parameters. The material is not a substitute for diamond film polishing or laser cleave inspection and does not remove epoxy bleed from ferrule bores.
Aluminum substrate disks for perpendicular magnetic recording are transferred from aqueous acid etching and electroless nickel-phosphorus plating through a vapor-phase water displacement step using 87.9 wt% IPA/12.1 wt% water azeotrope or neat 99.9% w/w electronic-grade IPA. The cleaning standard is SEMI C21 for the solvent and ISO 14644-1 Class 5 for the disk handling zone; the vapor degreaser sump is maintained at 80.4°C for the azeotrope, with 10–15 min vapor exposure. After IPA vapor drying, the disks are loaded into DC magnetron sputtering chambers for cobalt-chromium-platinum recording layer deposition; adsorbed water above 0.05% w/w on the disk surface causes film oxidation and coercivity shift. The terminal products are 2.5-inch and 3.5-inch hard disk drive platters for enterprise data centers and consumer archive drives. The limitation is that IPA vapor degreasing does not remove embedded subsurface oxidation from electroless nickel-phosphorus polishing pits; upstream filtration to 0.1 µm is required.
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Resonac Electronic Grade Isopropyl Alcohol is presented in the company’s electronic chemicals portfolio under the designation Isopropyl Alcohol Electronic Grade, with regional product codes assigned at commercial quotation and shown on drum-level certificates of analysis. The product is 2-propanol, CAS 67-63-0, molecular formula C₃H₈O, molecular weight 60.10 g/mol. It is manufactured by propylene hydration followed by dehydration, multiple distillation stages, and submicrometre filtration. Typical semiconductor and flat-panel display supply formats include 18 L canisters, 200 L fluoropolymer-lined drums, and bulk container systems sized for point-of-use distribution. For the standard release profile, assay by gas chromatography is ≥99.99 %, moisture by Karl Fischer titration is ≤100 ppm, non-volatile residue by ASTM D1353 is ≤1 ppm, chloride by ion chromatography is ≤50 ppb, sulfate by ion chromatography is ≤50 ppb, and individual trace metal content by ICP-MS is typically ≤10 ppb. The material is not formulated with methanol, methyl isobutyl ketone, bitterants, or oily high-boiling residue.
Physical property data for the anhydrous electronic-grade liquid include boiling point 82.6 °C at 1 atm, melting point -88.5 °C, density 0.785 g/cm³ at 20 °C, vapour pressure 4.4 kPa at 20 °C, viscosity 2.4 mPa·s at 20 °C, surface tension 21.7 mN/m at 25 °C, and refractive index 1.3776 at 20 °C. The isopropanol-water azeotrope exists at approximately 87.7 wt% isopropanol and boils at 80.4 °C; the electronic-grade product is dried below the azeotropic water content to support residue-sensitive drying processes.
The electronic-grade liquid is differentiated primarily by trace impurity control and particle performance. ACS reagent-grade isopropanol permits moisture near 0.2 % and non-volatile residue in the low part-per-million range, while Resonac electronic-grade material is controlled to prevent water, chloride, sulfate, and group I or group II metal contamination at levels that can compromise gate oxide integrity, via cleanliness, or under-bump metallurgy. Sodium and potassium above 10 ppb are known mobile-ion contaminants under bias-temperature stress, and iron above 10 ppb can reduce carrier lifetime when deposited on silicon surfaces. The product is also non-denatured. Consumer or industrial denatured IPA may contain methanol, methyl isobutyl ketone, or bittering agents, which can leave organic films or cause unexpected chemical attack in semiconductor cleaning; the Resonac grade is deliberately formulated without these additions.
Particle control is another structural difference. Electronic-grade IPA is filtered through membranes rated at 0.1 µm or finer at point of use, and cleanroom packaging is performed under ISO 14644-1 class 5 conditions. General-purpose solvent IPA is not subject to equivalent particle counting, trace-metal analysis, or cleanroom fill verification. The comparison below provides a generalized grade overview; specific acceptance levels are defined in the Resonac certificate of analysis and applicable regional specification.
| Parameter | Resonac Electronic Grade | ACS Reagent Grade | 70 % USP/Consumer Grade |
|---|---|---|---|
| Assay | ≥99.99 % | ≥99.5 % | 70 % v/v |
| Moisture | ≤100 ppm | ≤0.2 % | 30 % v/v added water |
| Non-volatile residue | ≤1 ppm | ≤5 ppm | not specified |
| Denaturants or bitterants | absent | absent | may contain bitterants |
| Individual trace metals | ≤10 ppb | not specified | not specified |
In moisture-sensitive wafer cleaning, the product is introduced through fluoropolymer or stainless-steel distribution lines with point-of-use recirculation. The low water specification is meaningful only if the container headspace remains nitrogen-blanketed after first use. If the drum is opened in cleanroom air and not protected with dry nitrogen, atmospheric moisture ingress can shift the Karl Fischer result upward; point-of-use moisture verification is therefore required for processes in which water-spot formation is a yield-detractor. The material is not a pharmaceutical antiseptic and should not be confused with isopropyl rubbing alcohol because the latter contains added water and may contain denaturants that create non-volatile residue after evaporation.
The release specification for the Resonac electronic-grade family is organized into bulk assay, water, non-volatile residue, anion, trace-metal, and particle categories. Gas chromatography with flame ionisation detection is used for assay and organic impurity profiling. Karl Fischer titration per ASTM E1064 provides moisture data. Non-volatile residue is measured by evaporation and gravimetric analysis per ASTM D1353. Chloride and sulfate are quantified by ion chromatography after sample concentration. Multielement trace-metal analysis is performed by inductively coupled plasma mass spectrometry. The standard certificate of analysis includes drum serial number, production date, and lot-specific results; additional analytical reports are available for fabs requiring a wider trace-metal panel or lower reporting limits.
| Parameter | Test method | Typical electronic-grade release control |
|---|---|---|
| Assay | GC-FID | ≥99.99 % |
| Moisture | ASTM E1064 Karl Fischer | ≤100 ppm |
| Non-volatile residue | ASTM D1353 gravimetric | ≤1 ppm |
| Chloride | Ion chromatography | ≤50 ppb |
| Sulfate | Ion chromatography | ≤50 ppb |
| Individual trace metals | ICP-MS | ≤10 ppb |
Because electronic-grade IPA is used as a displacement solvent after aqueous cleaning, the evaporation path from wafer surfaces is part of the application risk profile. Low non-volatile residue is necessary but not sufficient; the drying tool exhaust flow, substrate spin speed, and IPA nozzle geometry determine whether the evaporated solvent leaves a water mark or a high-boiling point residue. In high-volume manufacturing, process engineers monitor hydrophobic or hydrophilic surface transitions after drying by contact angle and bright-field inspection rather than relying on IPA bulk purity alone.
In production-scale single-wafer and batch immersion dryers, IPA is injected at the wafer meniscus to create a surface-tension gradient. Water has a surface tension of approximately 72.8 mN/m at 25 °C, while pure IPA has 21.7 mN/m at 25 °C. This gradient supports Marangoni flow that removes water from the substrate surface and reduces water-spot formation after final rinsing. The limitation is impurity deposition. As the solvent evaporates, any dissolved metal, chloride, sulfate, or non-volatile residue can remain on the wafer. For this reason, high-volume fabs place point-of-use purifiers on IPA supply lines feeding 300 mm dryers. Filter cartridges are often rated at 0.05 µm, and line pressure drop is monitored for particulate fouling. Published data for specific dryer chamber contamination rates are equipment-specific and cannot be transferred between tool architectures without confirmation.
Compared with acetone, IPA has a higher boiling point and lower vapour pressure at ambient temperature, which produces a slower evaporation profile and reduces thermal stress on thinned wafers during drying. Compared with methanol, IPA has a less aggressive vapour inhalation hazard but a higher flash-point sensitivity. Compared with N-methyl-2-pyrrolidone, IPA is lower boiling and lower viscosity, and it evaporates without leaving a high-boiling solvent residue after the drying step. These differences matter in drying module design: internal baffles, exhaust flow, and liquid delivery lines for IPA must address flammability more directly than NMP systems do.
Electronic-grade IPA is used as a rinse solvent or as a blend component in edge bead removal and post-etch residue formulations. In these applications, the low-moisture and low-metal specifications are more critical than the bulk dissolution strength. Photoresist edge bead removers often combine active organic solvents with IPA to reduce surface tension and improve wetting at the wafer edge. If the IPA contains chloride above 50 ppb, copper interconnects may be exposed to chloride during the rinse and produce copper chloride at line edges during subsequent thermal treatments. The product also contains no added organic acids or buffers; process engineers requiring lower pH use a separate electronic-grade buffer system because direct addition of strong mineral acid to IPA can generate propylene through acid-catalyzed dehydration and may increase local exotherm.
The purity benefit is lost if the solvent is dispensed through unclean equipment. Point-of-use containers, pump heads, and delivery lines must be pre-cleaned and tested with the same analytical methods applied to the incoming IPA. In semiconductor fabs running copper/low-k interconnects, qualification of a new IPA lot generally includes non-volatile residue measurement, chloride measurement, and a process wafer split with post-clean surface inspection. Published data for specific resist systems are limited; each chemically amplified resist and post-etch residue formulation requires solubility verification before full production release.
Electronic-grade IPA is classified as a class 1B flammable liquid under NFPA 30. The closed-cup flash point is 12 °C. Lower explosive limit is 2.0 vol% in air and upper explosive limit is 12.7 vol% in air, with flammability limits measured by ASTM E681. Bulk storage requires grounded vessels, nitrogen blanketing, and ventilation classified for flammable vapour. Autoignition temperature is 399 °C. Oxygen systems and strong oxidizers must be separated from IPA storage and waste lines.
The product is hygroscopic. Once a drum is opened, water uptake depends on cleanroom relative humidity, ullage volume, and container sealing. If headspace is not maintained under dry nitrogen, moisture can rise above the ≤100 ppm release limit and alter drying behaviour. Dispense systems should use dry-nitrogen make-up, moisture-exclusion filters, and point-of-use Karl Fischer monitoring for critical drying applications. Contact with concentrated sulfuric acid, sulfuric acid/hydrogen peroxide mixtures, aluminum chloride, or chlorinating agents should be avoided because acid-catalyzed dehydration and oxidation can occur. The product is not intended for pharmaceutical, cosmetic, or food-contact use; it is not validated to USP or EP isopropanol monographs. Waste collection must be segregated from oxidizer waste streams and handled under flammable solvent controls.
Resonac supplies the product with safety data sheets, lot-specific certificates of analysis, and cleanroom packaging documentation. The relevant electronics industry benchmark is SEMI C19, although the Resonac certificate of analysis includes trace-metal and particle release points that may exceed the baseline standard requirements. Material produced under legacy predecessor designations should be revalidated against current Resonac product codes before use in high-volume semiconductor manufacturing.
