| HS Code | 816202 |
| Product Name | LG Chem Isopropyl Alcohol Electronic Grade |
| Chemical Formula | (CH3)2CHOH |
| Cas Number | 67-63-0 |
| Molecular Weight | 60.10 g/mol |
| Purity | ≥99.99% |
| Specific Gravity 20 20 C | 0.786 |
| Boiling Point | 82.5°C |
| Melting Point | -89.5°C |
| Flash Point | 11.7°C |
| Vapor Density Air 1 | 2.07 |
| Vapor Pressure 20 C | 33 mmHg |
| Solubility In Water | Miscible |
| Refractive Index 20 C | 1.377 |
| Evaporation Rate Butyl Acetate 1 | 1.7 |
As an accredited LG Chem Isopropyl Alcohol Electronic Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in a 20L high-purity steel drum under nitrogen, ensuring electronic-grade isopropyl alcohol remains contamination-free. |
| Container Loading (20′ FCL) | 20′ FCL: one sealed container loaded with LG Chem Isopropyl Alcohol Electronic Grade, securely stowed and labeled for safe transport. |
| Shipping | LG Chem Isopropyl Alcohol Electronic Grade ships as a flammable liquid (IPA), requiring standard hazardous material protocols. Use grounded, sealed containers with proper UN labeling. Avoid heat, sparks, and static discharge. Ensure secondary containment and disposal compliance. Transport via chemical-approved carriers, with documentation for purity and safety data sheets. |
| Storage | Store LG Chem Isopropyl Alcohol Electronic Grade in a cool, dry, well-ventilated area away from heat, sparks, and open flames. Keep the original container tightly sealed to prevent moisture absorption and particulate contamination, preserving ultra-high purity. Avoid contact with strong oxidizers and use grounding to prevent static discharge. Follow all safety data sheet guidelines. |
| Shelf Life | Shelf life is typically 3 years from manufacture when stored unopened in original containers under recommended conditions. |
After dilute hydrofluoric acid or buffered oxide etch on a silicon wafer, the surface is left hydrogen-terminated and hydrophobic. Direct transfer to ultrapure water at 18.2 MΩ·cm resistivity can cause particle redeposition because the pH shift alters the zeta potential of residual silicon dioxide particles. LG Chem Isopropyl Alcohol Electronic Grade is introduced as an intermediate rinse at 70:30 vol% IPA/UPW and 20–25 °C. The surface tension of the liquid is below that of water, and the mixture penetrates high-aspect-ratio trenches, via sidewalls, and capacitor area in dynamic random access memory and 3D NAND structures. In an overflow immersion bath, the rinse is maintained for 120–300 s with recirculation through a 0.1 µm PTFE filter; in a single-wafer spray processor, the same mixture is delivered at 0.5–1.0 L/min for 60–120 s. The wet bench is operated within an ISO 14644-1 Class 3 minienvironment to prevent recontamination. The electronic-grade solvent is selected against SEMI C35 quality controls so that cation and anion residues are not transferred to the wafer after the etch step.
| Rinse step | Composition | Temperature | Time | Equipment |
|---|---|---|---|---|
| Post-etch intermediate rinse | 70:30 vol% IPA/UPW | 20–25 °C | 120–300 s immersion or 60–120 s spray | Overflow bath or single-wafer spray tool |
| Final solvent rinse | Anhydrous electronic-grade IPA | 20–25 °C | 30–60 s | Single-wafer spin processor |
| Marangoni dry | IPA vapor in nitrogen | 20–40 °C | 20–60 s withdrawal | Vapor dryer or spin dryer with IPA injection |
Following the liquid IPA rinse, Marangoni drying is used to remove water without leaving spin-dry streaks. The wafer is withdrawn from a UPW bath while IPA vapor is injected into the near-surface zone; the resulting surface tension gradient pulls water away from the wafer surface. The final rinse uses anhydrous IPA with water content below 0.1 wt% because higher water levels reduce the surface-tension gradient and produce drying defects. For high-aspect-ratio structures, the drying process window is narrow: bath temperature is held at 20–40 °C, and IPA vapor flow is adjusted to the wafer diameter to avoid liquid condensation. When front-end device requirements extend to trace-metal control, each cation is typically controlled below 10 ppb in the final film. Terminal products include logic wafers, DRAM, 3D NAND, and photomasks.
Photoresist edge bead formation on 300 mm wafers produces focus offset at the wafer edge and particle bursts during post-exposure bake. Undiluted LG Chem electronic-grade IPA is dispensed through edge bead removal nozzles at 3–5 mL per wafer while the wafer rotates at 800–1200 rpm for 10–15 s. The nozzle position is offset 0.5–1.0 mm from the edge exclusion boundary; a separate backside rinse stream dissolves resist droplets and prevents coater chuck contamination. Low water content below 0.1 wt% avoids swelling of the resist edge and maintains a sharp boundary at the exposure exclusion zone. On coater/developer systems, the edge bead removal flow is synchronized with the resist spin-off step to prevent solvent back-splash onto the active area. The solvent has a boiling point of 82.5 °C and a vapor pressure of 4.4 kPa at 20 °C, defining the flash-off behavior. Terminal products include 248 nm and 193 nm photoresist patterns on logic and foundry wafers.
Excessive edge bead removal dispense creates a capillary undercut into the active area and can lift the resist beyond the intended remove width; insufficient dispense leaves a raised edge bead that contacts the exposure chuck and transfers particles. The viscosity of the solvent at 20 °C is 2.4 mPa·s, and the evaporation rate is high enough to avoid pooling but low enough to allow controlled drainage. Exhaust face velocity at the coater cup is maintained at 0.5–1.0 m/s to prevent vapor accumulation. Published data for coating-track integration at 0.1 wt% water in edge bead removal solvent is limited; fab-specific qualification is required before changing bath life or nozzle schedule.
In Gen 8.5 and Gen 10.5 TFT-LCD lines, glass substrates enter wet cleaning after scribing and before gate metal deposition. LG Chem electronic-grade IPA is blended with UPW at 30–50 vol% and heated to 25–40 °C. The bath is agitated with megasonic transducers at 950 kHz for submicron particle removal; ultrasonic tanks at 40 kHz are used for initial organic film dissolution. The lower surface tension of the solvent blend, approximately 22–30 mN/m depending on water content, reduces water spotting on glass and improves drainage from the narrow gap between the glass and transport rollers. Bath lifetime is controlled by gas chromatography and laser particle counters at 0.3 µm; when particle counts exceed 100 counts/mL, the bath is dumped and recharged. Terminal products include TFT-LCD arrays, rigid OLED backplanes, and color filter glass.
Moisture tolerance is more significant in display cleaning than in wafer drying because the large glass area exposes the solvent to humid cleanroom air. Water content in the working bath drifts upward over shift operation; above 20 wt% water, the blend can leave visible striations after drying. The replacement interval is calculated from evaporation mass balance and Karl Fischer titration; typical make-up uses anhydrous IPA to hold water below 10 wt% in the final rinse tank. The mixture contains no non-volatile additives, so it is compatible with downstream vacuum deposition once the glass has passed through a hot-air or infrared dryer at 60–80 °C.
In microelectromechanical system release processes, water-based sacrificial oxide etching leaves silicon cantilevers and plates vulnerable to capillary stiction when the rinse liquid evaporates. LG Chem electronic-grade IPA is introduced as a displacement rinse at 70:30 vol% IPA/UPW, then replaced by anhydrous IPA before supercritical CO₂ drying. The capillary force between adjacent beams is proportional to the surface tension of the drying liquid; the surface tension of anhydrous IPA at 21.7 mN/m is substantially lower than that of water, reducing beam pull-in. In liquid CO₂-based dryers, IPA serves as a co-solvent because it is miscible with both water and CO₂ at 31 °C and 7.4 MPa. Process limits are narrow: the final IPA fill must have water content below 0.5 wt% to avoid phase separation in the CO₂ stream. Published data for release of high-aspect-ratio electrostatic comb-drive structures of 2 µm gap is limited; unit-specific drying recipes are qualified by wafer curvature and electrical probe. Terminal products include accelerometers, gyroscopes, inkjet printheads, and pressure sensor membranes.
Flux residue under low-standoff flip-chip die and 0.4 mm pitch µBGA packages remains a primary ionic contamination source after reflow. LG Chem electronic-grade IPA is applied in in-line spray cleaning machines at 20–40 psi impingement pressure and 25–45 °C bath temperature. The solvent dissolves rosin and resin acid carriers from type ROL0 and ROL1 solder pastes; for no-clean residues that have undergone thermal polymerization, dwell time is extended from 5 min to 15 min or the IPA is paired with a saponifier stage. Because electronic-grade IPA contains low chloride and sulfate backgrounds, the cleaning step does not itself add ionic contamination to the laminate. After cleaning, boards are rinsed with deionized water at 18 MΩ·cm and dried with filtered air at 60 °C for 10–20 min.
| Verification method | Parameter | Acceptance threshold | Application boundary |
|---|---|---|---|
| IPC-TM-650 2.3.25 | Ionic contamination | 1.56 µg NaCl equivalent/cm² | After IPA-based spray cleaning |
| IPC J-STD-001H, Clause 8 | Visual residue | No white residue at 10× magnification | Under solder balls and underfill fillets |
The main process limitation is that IPA cannot fully remove polymerized no-clean flux from under large die without a thermal soak or mechanical underfill flow; in those cases, spray pressure is raised to 60 psi but cycle time remains constrained by solvent loss through evaporation. Terminal products include high-density interconnect PCBs, RF modules, and automotive ADAS assemblies.
For single-mode and multi-mode connector end faces, inspection to IEC 61300-3-35 is performed before mating. LG Chem electronic-grade IPA is applied with lint-free polyester wipes or cassette cleaners at 0.2–0.5 mL per end face. The low non-volatile residue specification prevents deposits that scatter light and increase return loss. Wiping is performed in one direction to avoid recontamination from the ferrule edge. After solvent flash-off at 20–25 °C, the end face is dried with filtered air at 0.2 MPa to remove any remaining film. The solvent is packaged in sealed containers to prevent water uptake and particle ingress in optical assembly areas.
The operational boundary is moisture pickup: IPA left in an open container in an assembly room at 60% RH can absorb water and leave haze after drying. For planar lightwave circuits and dielectric thin-film filters, the same grade is used with immersion times below 5 min because extended exposure can swell index-matching adhesives. Terminal products include optical transceivers, fiber array units, and passive optical modules.
Acetone replacement in stencil and misprint cleaning becomes necessary where acetone attacks stencil adhesives or violates site VOC limits. LG Chem electronic-grade IPA is used in ultrasonic stencil cleaners at 40 kHz and 30 °C for 10–15 min after solder paste misprints. The stainless steel stencil foil with aperture openings down to 0.3 mm pitch is cleaned of type 3 and type 4 solder paste residues without leaving chloride films. An under-jet spray cycle at 0.3–0.5 MPa follows the ultrasonic tank to clear apertures. Drying is performed with ambient air knives at 50 °C for 5 min.
The solvent’s lower surface tension relative to water allows drainage from solder paste apertures with aspect ratio up to 1:1.5. For fully cured adhesive residues, IPA alone is not a replacement for a dedicated under-stencil cleaner; this boundary is specified in the stencil supplier’s maintenance procedure. Terminal products are high-mix SMT assemblies, 0603 metric chip passives, and fine-pitch QFP footprints.
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LG Chem isopropyl alcohol electronic grade is supplied as a high-purity 2-propanol solvent for surface conditioning, residue removal, and low-water-tension drying in semiconductor, flat-panel-display, and precision-optics manufacturing. The material is identified by CAS 67-63-0 and is typically released against a minimum assay of 99.99 mass % 2-propanol, with water controlled at or below 100 mg/kg and evaporation residue at or below 5 mg/kg; the controlling document for any received lot is the supplier certificate of analysis because terminal purification, packaging, and delivery can shift individual cation and particle results. In wafer fabrication, the solvent is distributed through dedicated stainless steel or fluoropolymer lines and is filtered at point-of-use with 0.1 µm or 0.05 µm membrane filters to protect polished substrates from particles. The electronic-grade stream differs from technical-grade 2-propanol primarily in the reduction of alkali and alkaline-earth cations, soluble chloride and sulfate, nonvolatile residue, and water, rather than in the fundamental solvent strength of the C3H8O molecule.
Commercial identification may appear as LG Chem Isopropyl Alcohol Electronic Grade on the container label, with a site-specific product code and lot number linked to the certificate of analysis. The user should retain those codes for change-control and lot-traceability investigations. Packaging formats commonly include bulk isotainers, stainless-steel containers, and fluoropolymer-lined drums, but availability for a particular manufacturing site should be confirmed with the supplier because bulk logistics can change final filtration and container preparation steps. For cleaning tools with point-of-use filtration, the solvent is often transferred under dry nitrogen and sampled from the day tank rather than from the original container to ensure the distribution system is within the specified water and particle limits.
In single-wafer cleaning tools, the final rinse is often shifted from ultrapure water to electronic-grade IPA to lower surface tension from about 72 mN/m for water to 21–23 mN/m at 25 °C. The lower surface tension reduces capillary stress inside high-aspect-ratio resist and silicon structures after spin-off; this is the same mechanism used in Marangoni or surface-tension gradient drying. A typical process applies IPA at a wafer rotational speed of 1,000–1,500 rpm for 20–60 s, followed by nitrogen purge with a dew point below -40 °C. Bath temperature and humidity control are required because water uptake from the cleanroom atmosphere can degrade the drying effect before the substrate exits the rinse chamber. The electronic-grade specification matters here because residual sodium below 10 µg/kg and chloride below 10 µg/kg are low enough that the rinse does not redeposit ionic contamination on exposed gate oxides or metal pads after drying. Lower-purity IPA can leave a sub-monolayer residue that shifts contact angle and degrades adhesion of subsequent spin-on dielectrics or underfill layers. Equipment-specific defect counts on 300 mm wafer lines show that water and nonvolatile residue in the final rinse solvent correlate with post-dry watermarks and residue-driven critical dimension variation, but published data for this specific configuration is limited; therefore the user should qualify the solvent against a controlled process-of-record test wafer set.
Photoresist edge-bead removal on spin coaters uses IPA dispensed through a nozzle at the wafer edge; the solvent dissolves the thick edge bead and reduces particle transfer to the backside of the wafer. Because IPA has a typical viscosity of 2.0–2.4 mPa·s at 20 °C, it wets the edge quickly and is removed by centrifugal force. If the water content is too high, the edge-bead removal rate decreases and the waist of the resist layer may be left with an organic residue that hardens during softbake. The electronic-grade product therefore directly affects the defect density of the lithographic step rather than serving only as a general-purpose cleanroom solvent.
Vapor-phase drying in batch systems uses IPA vapor to displace water from wafer surfaces. The vapor is generated from electronic-grade liquid in a quartz or stainless-steel boiler; a typical vapor zone temperature is 80–85 °C, close to the boiling point of 2-propanol at atmospheric pressure. Water contamination in the boiler shifts the boiling point and leaves a water-rich condensate that can re-deposit onto substrates. The electronic-grade product’s low water and nonvolatile residue values are directly relevant to the liquid feed used in vapor generation. Boiler residues should be drained periodically because nonvolatile impurities concentrate in the liquid heel even when the feed is within specification.
Differences between electronic-grade and technical-grade material become measurable after a single pass through standard dispensing equipment. Technical-grade IPA often contains 200–500 mg/kg water and total cation concentrations in the low mg/kg range; when this material is used in a spin coater or spray tool, evaporation leaves an optically visible or sub-visible residue on test wafers. Electronic-grade product is handled to maintain lower particle counts: a common release metric is ≤ 15 particles/mL at 0.5 µm particle size, depending on the applicable SEMI C35 grade. The following table compares order-of-magnitude profiles rather than guaranteed lot values.
| Parameter | Unit | Test method / specification | Technical grade | Electronic grade typical release |
|---|---|---|---|---|
| 2-Propanol assay | mass % | gas chromatography, ASTM D770 | ≥ 99.0 | ≥ 99.99 |
| Water | mg/kg | ASTM D1364 / Karl Fischer coulometry | 200–500 | ≤ 100 |
| Evaporation residue | mg/kg | ASTM D1353 | ≤ 20 | ≤ 5 |
| Acidity as acetic acid | mg/kg | ASTM D1613 | ≤ 50 | ≤ 10 |
| Sodium + potassium | µg/kg | ICP-MS after evaporation | not controlled | ≤ 10 |
| Chloride + sulfate | µg/kg | ion chromatography | not controlled | ≤ 50 |
| Particles ≥ 0.5 µm | particles/mL | laser particle counter | not controlled | ≤ 15 |
Bulk storage of electronic-grade IPA in humid fab environments introduces water uptake through breather vents, pump seals, and flexible transfer lines. Open or poorly blanketed containers in cleanroom ambient at 45–55 % RH can absorb water; the transfer system should therefore avoid breather vents open to plant air. Storage and dispensing systems should use dry nitrogen blanketing at a pressure of 0.2–0.5 bar and a dew point below -40 °C. Maintenance of a closed-loop fill system with dedicated return lines prevents backflow from lower-grade solvent or humid ambient air. In a semiconductor fab, the distribution loop should be passivated and sampled weekly for water, metals, and particles until steady-state values are demonstrated; after any pump or filter change, reinspection is required because stainless-steel surface oxidation and elastomer wear can release iron, zinc, and extractable organics. Published data for the specific absorption rate of LG Chem packaging is limited, but the hygroscopicity of 2-propanol is well established and mandates the same exclusion of atmospheric moisture applied to N-methyl-2-pyrrolidone and other polar solvent distribution systems.
Electronic-grade IPA used for wafer cleaning is not defined solely by assay. The critical differences are the metallic cation budget and the particle burden. Common release limits for sodium, potassium, calcium, iron, copper, and zinc are individually ≤ 10 µg/kg, while total chloride and sulfate are controlled below 50 µg/kg. These levels support compatibility with gate oxide integrity and back-end-of-line metal structures, where mobile ions and ionic residues can produce flatband voltage shifts in capacitance-voltage measurements. In an analytical laboratory, metal content is determined by evaporating the solvent in a clean PTFE vessel, redissolving the residue in ultrapure acid, and quantifying by ICP-MS; anion content is determined by ion chromatography after preconcentration. The supplier should provide lot-specific trace metal data rather than only bulk purity, because a high assay can coexist with contamination introduced from storage tanks, pumps, or packaging. For process release, the material should be tested in accordance with the user’s incoming chemical qualification plan; if the solvent is intended for SEMI C35 applications, the certificate should explicitly list the SEMI C35 grade and version on the certificate of analysis.
| Property | Typical control limit | Analytical method |
|---|---|---|
| Assay | ≥ 99.99 mass % | Gas chromatography |
| Water | ≤ 100 mg/kg | ASTM D1364 / Karl Fischer coulometry |
| Color, Pt-Co | ≤ 10 APHA | ASTM D1209 |
| Density at 20 °C | 0.785–0.787 g/cm³ | ASTM D4052 |
| Residue after evaporation | ≤ 5 mg/kg | ASTM D1353 |
| Acidity | ≤ 10 mg/kg as acetic acid | ASTM D1613 |
| Critical metal cations | ≤ 10 µg/kg each | ICP-MS after solvent evaporation |
Display-grade usage extends to TFT-LCD and OLED substrate cleaning before sputtering and after photoresist stripping. In these lines, wipe or megasonic cleaning with electronic-grade IPA removes organic residues and reduces post-drying stains. The low water content prevents white haze on polarizer-attached surfaces when dried at 40–60 °C. Hard disk drive suspension and precision-machined stainless-steel parts use IPA as a final cleaning solvent to remove hydrocarbon films and particulates. The product is filtered at 0.2 µm and applied by spray lances or ultrasonic tanks; immersion baths require regular water and particle monitoring because repeated exposure to ambient air and part drag-in can contaminate the bath faster than the bulk solvent is consumed. For precision optics, IPA is used for final low-residue cleaning of calcium fluoride and fused silica windows, but evaporation residue and particle specifications must be confirmed against the optical surface roughness and laser damage threshold of the specific substrate.
ACS/reagent-grade IPA under ASTM D770 is controlled for general laboratory use, but its water and residue limits are wider than electronic-grade. Technical-grade material may be produced from propylene hydration and subsequent distillation without the additional filtration, ion exchange, or packaging discipline required for electronic use. Electronic-grade product is typically refined through a higher-efficiency azeotropic or extractive distillation step and transferred through dedicated containers to prevent back-contamination. The process result is lower aromatic and ketone impurities, lower sulfur compounds, and lower UV-absorbing substances that could interfere with photoresist optics. In semiconductor lithography, UV absorbance at 248 nm or 193 nm is not a master solvent property because the solvent is removed before exposure, but nonvolatile UV-absorbing residues from lower-grade material can cause defects in subsequent wet etch or photoresist adhesion. The product’s electronic-grade status therefore depends as much on the supply-chain and packaging controls as on the distillation assay.
Operational boundaries are defined by flammability and absorbency. Isopropyl alcohol has a flash point near 12 °C and forms flammable vapor-air mixtures; dispensing systems require explosion-proof electrical classification and local exhaust ventilation. Avoid contact with strong oxidizers such as hydrogen peroxide and nitric acid because exothermic decomposition and vapor generation can occur. The solvent is incompatible with some elastomers, including natural rubber and certain EPDM compounds, which can swell and release extractables into the bath; use PTFE, PFA, stainless steel, or FFKM seals. If reused in immersion cleaning, the bath should be monitored for water, acidity, and particle count because repeated use raises water content and contaminant concentration. Waste handling should follow local hazardous-waste regulations and REACH obligations; the material is not intended for medical or food-contact use unless separately qualified by the user against the applicable FDA 21 CFR requirement.
