| HS Code | 613987 |
| Productname | Hubei Sinophorus Electronic Materials Co Ltd Isopropyl Alcohol Electronic Grade |
| Casnumber | 67-63-0 |
| Molecularformula | C3H8O |
| Purity | ≥99.99% |
| Watercontent | ≤0.05% |
| Evaporationresidue | ≤0.001% |
| Acidityasaceticacid | ≤0.0002% |
| Alkalinityasammonia | ≤0.0002% |
| Refractiveindexat20c | 1.377-1.380 |
| Densityat20c | 0.785-0.790 g/cm3 |
| Boilingpoint | 82.4°C |
| Freezingpoint | -89.5°C |
| Colorapha | ≤10 |
As an accredited Hubei Sinophorus Electronic Materials Co Ltd Isopropyl Alcohol Electronic Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 1L HDPE bottle with safety seals and desiccant, ensuring high-purity electronic-grade isopropyl alcohol remains contamination-free per bottle. |
| Container Loading (20′ FCL) | 20' FCL: Isopropyl alcohol in drums/pails, palletized, secured to prevent movement, no mixing with other cargo. |
| Shipping | Shipment: Isopropyl Alcohol (Electronic Grade) from Hubei Sinophorus Electronic Materials Co., Ltd. Packaged in sealed, contaminant-free containers to maintain ultra-high purity. Handle as flammable liquid (Class 3). Avoid ignition sources, ensure ground bonding, and protect from moisture. Transport upright, with proper labeling and documentation for industrial use. |
| Storage | Store in tightly sealed original containers in a cool, dry, well-ventilated area, away from heat, sparks, open flames, and oxidizing agents. Use explosion-proof equipment and grounded bonding. Keep container upright to prevent leaks. Avoid exposure to moisture and contamination. Follow electronic-grade purity handling standards. |
| Shelf Life | Shelf life is 12 months from manufacture date when stored sealed, away from heat, moisture, and ignition sources. |
Post-ash polymeric residue removal after via and trench dry etch on low-κ dielectrics is one downstream state where the electronic-grade isopropanol from Hubei Sinophorus Electronic Materials Co., Ltd. functions as both an organic residue solvent and a final non-aqueous rinse. The material is identified under EU REACH as EC 200-661-7 with CAS 67-63-0. In a 300 mm single-wafer spray tool, the solvent is dispensed through a 0.05 µm PTFE point-of-use filter at 1.0 L/min to 1.5 L/min onto a wafer rotating at 800 rpm to 1500 rpm. The wafer temperature is held at 23 °C to 25 °C. For front-end qualification, the water content is controlled under ASTM E203-16 to ≤ 0.010 %. If the water assay drifts above that limit, a hydration layer can form on low-κ sidewalls after the subsequent 400 °C annealing step, shifting the effective dielectric constant and degrading defect electrical data. The cation budget for Na, Mg, K, Ca, Fe, Cu, Zn, Mn, Al, Ni, Cr, and Li is held at ≤ 10 µg/L per element by ICP-MS. In Marangoni drying, the solvent is vaporized into heated nitrogen at 60 °C to 80 °C and introduced at the wafer/DI water meniscus. Local surface tension reduction from 72 mN/m to below 25 mN/m creates an outward Marangoni flow that prevents water-spot silica residue. On production-scale batch dryers, particle defect maps recorded with SP2/SP3 inspection show a 20 % to 35 % reduction in defects when the feed line is moved from a 0.2 µm to a 0.05 µm point-of-use filter. At ambient relative humidity above 60 %, the dispense line is pre-dried with dry nitrogen for 10 minutes before first solvent flow to prevent water condensation in the pump cavity. A field-observed failure mode is swelling of unsupported EPDM pump diaphragms after repeated contact with hot solvent; PTFE or PVDF wetted parts and electropolished 316L stainless steel are the compatible alternatives. Natural rubber and polyurethane seals are excluded because they release oligomer residues into the final rinse. The resulting wafer enters post-clean inspection with no water-spot haze and a metal contamination map that meets device-specific D0 targets.
| Parameter | Test method / standard | Typical acceptance limit |
|---|---|---|
| Assay | SEMI C18 GC-FID | ≥ 99.9 % |
| Water | ASTM E203-16 | ≤ 0.010 % |
| Nonvolatile residue | ASTM D1353-13 | ≤ 5 ppm |
| Particles ≥ 0.2 µm | liquid particle counter | ≤ 100 particles/mL |
| Critical cations | ICP-MS | ≤ 10 µg/L per element |
| Anions Cl⁻, NO₃⁻, SO₄²⁻ | ion chromatography | ≤ 0.1 mg/L each |
In a 300 mm coater/developer track, edge bead removal and backside rinse steps use a solvent mixture to strip photoresist from the wafer bevel, edge exclusion zone, and back surface before or after exposure. The edge bead removal line dispenses a 70:30 PGMEA:IPA blend by volume at 23 °C through a 0.1 µm PTFE filter. The 30 % IPA fraction modifies the evaporation rate and dissolution capacity of the PGMEA so that the edge boundary of the resist remains sharp without lifting the active-area film. For chemically amplified resists based on t-BOC-protected polyhydroxystyrene, free water above 500 ppm in the IPA fraction changes the local acid-catalyzed deprotection equilibrium at the bead. That can shift the edge profile by 50 nm to 80 nm in CD-SEM measurement and produce an irregular exclusion boundary. The low-water electronic-grade solvent is therefore specified at ≤ 0.010 % by ASTM E203-16. On a production track, raising spin speed from 1200 rpm to 1800 rpm while holding dispense time constant reduces edge exclusion width by approximately 1.2 mm but raises solvent use by 35 %. A practical batch-to-batch variation marker is viscosity drift greater than 0.2 cSt, which indicates either water absorption or evaporative loss in the storage vessel. The terminal product is a 300 mm wafer with the resist edge removed within the specified exclusion zone, no bevel particles, and no detectable metal cations above the front-end gate oxide limit.
Under fine-pitch aperture deposits for 0.3 mm pitch CSP packages, solder paste with type 5 or type 6 powder and metal loading of 85 % to 90 % by weight generates deposit deviations when stencil underside flux residues accumulate. Electronic-grade IPA is applied neat from a pump-fed dispenser through a 0.1 µm point-of-use filter onto a lint-free polyester wiper. The wiping sequence is a wet pass followed by a dry pass under 0.15 MPa to 0.25 MPa head pressure. For water-soluble paste systems, a 90:10 IPA:DI water blend by volume increases ionic residue removal but requires a final neat IPA pass to prevent galvanic interaction on exposed copper pads. The control metric is paste transfer efficiency; below 85 %, the stencil is returned to the cleaning cycle. Halide contamination after cleaning is evaluated by IPC-TM-650 2.3.25 ROSE extraction, with a pass level below 1.56 µg NaCl/cm² equivalent. A field-observed failure mode is polyester wiper edge fiber contamination entering fine apertures, which is why wiper lots require visual inspection under 15× magnification before release. The terminal output is a stencil ready for consistent paste release on 0.3 mm pitch pads, with no visible flux film and no lint residue.
Modern 8.5-generation display lines use ultrasonic and megasonic cleaning stages before sputter deposition of indium tin oxide. The electronic-grade IPA is fed to the cleaning module through a 0.05 µm nylon membrane filter, and the bath is held at 28 °C to 32 °C. After the liquid cleaning step, high-purity nitrogen blow-off at 0.6 MPa removes the solvent from 2200 mm × 2500 mm glass substrates. Particle contamination above 0.2 µm is monitored with a liquid particle counter, and the post-clean level is kept below 0.3 particle/cm². Under ISO 14644-1 Class 5 environment, the low sodium and potassium content of the IPA prevents alkali diffusion into the indium tin oxide layer. Alkali contamination above 1 × 10¹² atoms/cm² at the ITO interface shifts the work function and degrades OLED hole-injection uniformity. In production-scale testing, work-function shift remains below 0.1 eV when the IPA cationic metals are below 10 µg/L by ICP-MS. Open-top storage in humid fab air is limited to 8 hours; water absorption beyond 0.02 % increases conductivity and causes particle reattachment. The terminal product is a transparent conductive substrate for thin-film transistor or AMOLED backplanes.
Assembly-level defluxing for boards containing 0201 chip components and exposed die pads must deliver solvent penetration through standoff gaps below 50 µm without leaving conductive residues. Electronic-grade IPA is used neat at 35 °C to 45 °C in a closed-loop spray-under-immersion cleaning system. Nozzle impingement pressure is set at 0.35 MPa to 0.45 MPa. For no-clean flux formulations based on modified rosin and esterified saponifiers, pure IPA dissolves the organic carrier but may not fully ionize all metal carboxylate salts. A post-clean 85:15 IPA:DI water blend by volume improves chloride and bromide removal for water-soluble residues, but it reduces the flash point and increases forced-air drying time from 25 seconds to 45 seconds. Surface insulation resistance measured by IPC-TM-650 2.6.3.7 at 85 °C and 85 % RH must remain above 1 × 10⁸ Ω after 168 hours. Ionic contamination on the finished printed circuit assembly is held below 1.56 µg NaCl/cm² equivalent by IPC-TM-650 2.3.25. In a 100 L batch cleaner, solvent drag-out and evaporation raise consumption by 8 % to 10 % per day; carbon adsorption and distillation return IPA with water below 0.1 % by Karl Fischer. Polyurethane wipers and natural rubber seals are excluded because swelling releases oligomers onto high-impedance circuits. The terminal output is an assembled mobile or computing board with under-component cleanliness verified by ionic extract and SIR data.
Precision optical components such as fused silica, calcium fluoride, and zinc sulfide windows are cleaned with electronic-grade IPA immediately before ion-assisted electron-beam coating with magnesium fluoride or silicon dioxide. The solvent is dispensed through a 0.1 µm PTFE filter onto polyester or polyamide cleanroom wipes inside an ISO 14644-1 Class 5 environment. Nonvolatile residue is specified at ≤ 5 ppm by ASTM D1353-13. When NVR exceeds 10 ppm, the deposited coating exhibits increased pinhole density and reduced adhesion on fused silica. A final nitrogen blow at 0.4 MPa from 15 cm distance is used to remove evaporation residue. For calcium fluoride optics, water content above 0.02 % in the IPA can produce micro-haze through surface reaction with atmospheric CO₂ and water. The cleaned substrate is transferred to the coating chamber within 30 minutes to avoid recontamination. The terminal product is a coated lens or window with surface quality class 60/40 per MIL-PRF-13830B. The operational limit is to use a freshly opened container within 24 hours and to purge the dispense line with dry nitrogen.
For inductively coupled plasma mass spectrometry and graphite furnace atomic absorption spectroscopy analysis of organic residues on wafer and package surfaces, electronic-grade IPA acts as a trace-metal-compatible desorption solvent. A defined surface area is wiped with a polyester swab saturated with the solvent, then extracted in a PTFE vessel at 60 °C for 60 minutes. The extract is aspirated into the ICP-MS. Blank values for sodium, potassium, iron, calcium, magnesium, and copper must be below 0.1 ng/mL to avoid false-positive surface metal readings. The solvent blank, when prepared in a cleanroom laminar flow hood, supports a limit of quantitation below 1 × 10¹⁰ atoms/cm² for critical alkali and transition metals. The same solvent is used in gas chromatography and ultraviolet-visible spectroscopy for organic impurity characterization. Nonvolatile residue is held at ≤ 5 ppm by ASTM D1353-13 to prevent baseline drift in UV-visible scans above 210 nm. A practical operational boundary is the exclusion of glass bottles cleaned with detergent containing sodium metasilicate; borosilicate bottles leach trace boron and silicon during long-term storage. Published data for the exact extraction efficiency of this solvent on all advanced packaging polymers is limited, but blank thresholds above are typical of mature cleanroom laboratories. The terminal output is a validated trace-metal or chromatographic data set for incoming wafers, packaging materials, and process chemical release.
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Hubei Sinophorus Electronic Materials Co Ltd Isopropyl Alcohol Electronic Grade is supplied as a high-purity oxygenated solvent for semiconductor wafer cleaning, photoresist edge bead removal, chemical distribution line flushing, and electronic assembly defluxing. The material is identified by its electronic-grade designation rather than a separate model suffix in publicly available documentation. Its specification framework aligns with the application class for isopropyl alcohol used in microelectronics under SEMI C21. End-user release limits are typically tightened further for sub-ppb metal control and particle burden.
Representative physical constants are propan-2-ol CAS 67-63-0, density 0.785 g/cm³ at 20 °C, viscosity 2.1 mPa·s at 25 °C, and closed-cup flash point 12 °C. The electronic-grade material is distinguished not by these bulk properties but by trace impurity control. Published product-specific lot data for the Hubei Sinophorus designation is limited; the values in the first table are representative electronic-grade control ranges, not a certificate of analysis.
| Parameter | Control range | Analytical method |
|---|---|---|
| Assay | ≥99.8 % | gas chromatography, flame ionization detection |
| Water | ≤0.1 % | Karl Fischer coulometry, ASTM E1064 |
| Non-volatile residue | ≤5 ppm | evaporation at 105 °C |
| Acidity | ≤0.002 meq/g | titration as acetic acid |
| Chloride | ≤0.1 ppm | ion chromatography |
| Metals, per element | ≤1 ppb | inductively coupled plasma–mass spectrometry after preconcentration |
| Particles ≥0.5 µm | ≤25 particles/mL | laser particle counting |
In front-end semiconductor manufacturing, alkali and transition metal ions present in process solvents can deposit on exposed silicon, silicon dioxide, or high-k dielectrics and degrade device reliability under bias temperature stress. Sodium and potassium are critical because their ionic radius and mobility allow migration in gate oxides. Electronic-grade isopropyl alcohol therefore specifies metals such as sodium, potassium, iron, and copper at ≤1 ppb per element when measured by inductively coupled plasma–mass spectrometry after evaporation and acid reconstitution. Cold-plasma ICP-MS is commonly used for sodium, potassium, and iron to reduce polyatomic interferences; quadrupole ICP-MS is sufficient for copper and zinc. Release control below 1 ppb is a typical electronic-grade requirement for these elements.
Particle burden is a separate control axis. Liquid-borne particles larger than 0.5 µm in isopropyl alcohol can redeposit on wafer surfaces during spin cleaning and form defects after drying. In chemical distribution systems, electronic-grade IPA is filtered through 0.05 µm to 0.1 µm polytetrafluoroethylene or high-density polyethylene membranes at the point of dispense. Laser particle counting of the packaged liquid is performed after filtration; a representative electronic-grade limit is ≤25 particles/mL at ≥0.5 µm. Particle counts are sensitive to sampling technique, container cleanliness, and particle counter calibration. In-line metrology in a semiconductor fab often uses a syringe sampler with a light-scattering particle counter connected to a 0.1 µm filter to avoid false counts from ambient air.
Water content remains one of the main differentiators for electronic-grade IPA. At ≤0.1 % water, the solvent dries quickly from high-aspect-ratio trenches during spin-rinse-dry sequences and minimizes water spotting. This is critical in single-wafer cleaning tools where Marangoni drying uses isopropyl alcohol vapor or liquid to reduce surface tension. In high-humidity environments above 60 % RH, water ingress through container vents can raise bulk water content; electronic-grade IPA is therefore supplied in containers with desiccant breather vents or under nitrogen headspace. End users should monitor water after opening and avoid repeated exposure to cleanroom air because the solvent is hygroscopic.
Release testing for electronic-grade IPA uses a combination of gas chromatography, Karl Fischer coulometry, ICP-MS, and laser particle counting. Gas chromatography with flame ionization detection confirms propan-2-ol content and screens for acetone, methanol, and other oxygenated impurities. Karl Fischer coulometry is preferred over volumetric titration because it provides lower detection limits for water in the 0.01 % range. For trace metals, evaporation of a 100 mL sample followed by acid reconstitution and ICP-MS analysis is common; the pre-concentration factor of 20× to 50× allows reporting limits below 0.1 ppb in some laboratories. Anion contamination, particularly chloride, may be measured by ion chromatography with a reporting limit near 0.1 ppm.
In a typical 300 mm single-wafer cleaning tool, electronic-grade isopropyl alcohol is delivered from a pressure canister or bulk chemical distribution line through fluoropolymer tubing and a 0.1 µm point-of-use filter. Spray pressure is commonly held between 0.1 MPa and 0.3 MPa. After chemical dispense, the wafer is rinsed with ultrapure water and then dried using a combination of spin and filtered nitrogen. The replacement of ultrapure water by isopropyl alcohol at the drying front lowers surface tension from 72 mN/m for water to approximately 21 mN/m for IPA at 25 °C, reducing pattern collapse in high-aspect-ratio structures. This is one reason why water content and non-volatile residue specifications are tighter for electronic-grade IPA than for solvent grades used in general industrial degreasing.
For photoresist edge bead removal, the solvent is applied at controlled low pressure to the wafer edge while the wafer rotates at 500–1,500 min⁻¹. The solvency toward typical novolac resin photoresist allows removal without etching aluminum, copper, or silicon dioxide films. However, the use of isopropyl alcohol on certain chemically amplified photoresists should be validated because residual solvent can interact with photoacid generators and affect line edge roughness in ≤45 nm design rules. Published data for this specific Hubei Sinophorus product in advanced-node lithography is limited.
The drying window for isopropyl alcohol in high-aspect-ratio structures is sensitive to water content and vapor-phase concentration. In Marangoni drying, a vapor of IPA in nitrogen is introduced above a slowly withdrawn wafer. If the vapor concentration is too low, pattern collapse occurs because the liquid-vapor interface curvature can generate capillary forces above 10 MPa in 20 nm features. If the vapor concentration is too high, condensation may leave organic residue. The water content of the liquid IPA and the relative humidity of the fab influence the vapor-phase composition. At ≤0.1 % water, the system maintains a lower surface tension front without requiring excessive IPA vapor. These interactions are not specified by the solvent alone; tool-specific vapor delivery and wafer withdrawal speed must be validated.
Electronic-grade isopropyl alcohol also enters flip-chip, ball grid array, and printed circuit board assembly cleaning. After reflow, water-soluble and no-clean flux residues may be removed by spray, immersion, or vapor degreasing. Isopropyl alcohol with low water content is preferred for cleaning copper pillar bumps and pad surfaces before underfill because water above 0.1 % can oxidize copper and increase contact resistance. In immersion cleaning tanks, agitation at 40 kHz and fluid temperature from 30 °C to 50 °C is a common starting condition, but cycle time must be validated for the specific flux formulation. The solvent should not be combined with amine-based additives without compatibility testing, as alkaline additives may alter pH and promote corrosion on aluminum bond pads.
| Grade | Water | Non-volatile residue | Metals per element | Particle control |
|---|---|---|---|---|
| Electronic-grade IPA, Hubei Sinophorus designation | ≤0.1 % | ≤5 ppm | ≤1 ppb | ≥0.5 µm controlled |
| General-purpose technical IPA | variable, often ≤0.5 % | often not specified | typically ppm range | not specified |
| USP/reagent IPA | ≤0.5 % typical monograph limit | not specified or ≤10 ppm | not controlled to ppb | not specified |
The substitution of electronic-grade IPA for technical-grade solvent becomes critical when the wafer surface contains exposed metal films or high-k dielectrics. Technical-grade IPA may contain alkali and transition metal residues in the ppm range that are acceptable for bench cleaning but can change threshold voltage or leakage current in metal-oxide-semiconductor devices. The difference between ≤1 ppb and 1–10 ppm metal contamination is three orders of magnitude, which is measurable by wafer-level surface analysis such as total reflection X-ray fluorescence or vapor phase decomposition–inductively coupled plasma mass spectrometry. Electronic-grade IPA reduces the risk of sodium and potassium migration in gate oxide and minimizes copper contamination on back-end-of-line wafers.
Bulk chemical distribution loops for IPA in fabs maintain low pressure and use nitrogen blanketing to reduce moisture and oxygen ingress. A 0.05 µm point-of-use filter is often installed in the dispense line. Recirculation loops may be operated at 0.1–0.2 MPa pressure difference. Pressure transfer with 99.999 % nitrogen is common to avoid pump particle generation. If the product is transferred from drums into day tanks, the day tank should be flushed with filtered nitrogen and the transfer line should be pre-cleaned with the same electronic-grade solvent before use. These practices maintain the low particle and metal burden of the product but do not substitute for point-of-use filtration.
The product is classified as a flammable liquid under UN 1219 with a flash point of 12 °C. Storage and dispensing require bonding, grounding, and inert gas blanketing. Use with strong oxidizers is an operational boundary: mixtures with nitric acid above 40 % or hydrogen peroxide above 30 % can undergo exothermic decomposition. The solvent should not be stored in aluminum or unlined carbon steel containers, as metal leaching can compromise electronic-grade purity. Transfer lines should use 316L stainless steel or fluoropolymers such as PTFE or PFA. Containers should remain sealed at ≤25 °C and away from direct sunlight. For high-purity applications, point-of-use filtration below 0.1 µm is recommended because particle counts may increase after container opening.
