| HS Code | 969897 |
| Product Name | Basf Isopropyl Alcohol Electronic Grade |
| Chemical Name | 2-Propanol |
| Chemical Formula | (CH3)2CHOH |
| Cas Number | 67-63-0 |
| Appearance | Clear, colorless liquid |
| Assay | ≥ 99.9% |
| Water Content | ≤ 0.01% |
| Boiling Point | 82.4°C |
| Flash Point | 11.7°C |
As an accredited Basf Isopropyl Alcohol Electronic Grade factory, we enforce strict quality protocols—every batch undergoes rigorous testing to ensure consistent efficacy and safety standards.
| Packing | Packaged in 1-liter HDPE bottles with tamper-evident seals, labeled for electronic-grade isopropyl alcohol purity and safe handling. |
| Container Loading (20′ FCL) | 20′ FCL: Packed in clean, dedicated ISO container. Secure drums/pails, avoid contamination, ensure proper labeling for flammable electronic-grade IPA. |
| Shipping | BASF Isopropyl Alcohol Electronic Grade ships as a flammable liquid in dedicated, properly grounded containers to prevent static discharge. It requires secure, leak-proof packaging with hazard labels, avoiding heat or ignition sources. Transport follows strict regulations for flammable chemicals, ensuring product purity is maintained during delivery. |
| Storage | Store Basf Isopropyl Alcohol Electronic Grade in tightly sealed, original containers in a cool, dry, well-ventilated area away from heat, sparks, open flames, and strong oxidizers. Keep containers grounded to prevent static buildup, avoid direct sunlight, and maintain temperature below 40°C. Ensure storage area is fire-rated, with spill containment and compatible materials. |
| Shelf Life | Shelf life is typically 24 months when stored unopened in original containers, protected from moisture and contamination. |
BASF electronic-grade isopropyl alcohol is specified in moisture-sensitive microelectronic cleaning operations where anion and cation residues, airborne molecular contamination, and drying defects must be held below equipment-detectable thresholds. The applications selected below are limited to production segments with documented electronic-grade IPA use: semiconductor wafer drying, lead-free SMT flux removal, flat panel display glass cleaning, advanced packaging lithography rinse, optical fiber connector end-face cleaning, and hard disk drive head stack assembly cleaning.
Single-wafer drying modules on 300 mm platforms inject BASF electronic-grade isopropyl alcohol into a heated nitrogen stream after SC1/SC2 cleaning and ultrapure water rinsing. The material is used undiluted for vapor generation; liquid draw per wafer is 2.5 mL to 7.0 mL, nitrogen carrier flow is 15 slm to 30 slm, and the resulting vapor concentration is held at 1.0 vol% to 1.8 vol%, below the 2.0 vol% lower flammability limit. The compliance anchor is SEMI C19, with chloride determined by ASTM D512 and density by ASTM D4052. During the drying sequence, the wafer rotates at 300 rpm to 500 rpm during the final ultrapure water rinse, then accelerates to 800 rpm to 1,200 rpm during IPA-assisted Marangoni drying; the condensed IPA-water film reduces surface tension from 72.8 mN/m to 21.7 mN/m at 20°C, displacing water from high-aspect-ratio trenches and contacted vias. Exhaust oxygen is monitored below 8%, vapor generator temperature is maintained at 70°C to 80°C, and the process chamber is kept at a ±5 Pa pressure differential relative to the surrounding cleanroom to prevent organic vapor recirculation. The terminal output is patterned 300 mm silicon wafers with sub-7 nm logic, DRAM, or NAND structures. Vapor concentration below 0.5 vol% leaves watermark defects at the wafer bevel, while concentration above 4.0 vol% produces condensation-driven particle redeposition; the resulting 0.5–4.0 vol% window is the production control band.
On high-density ENIG-coated PCBs assembled with SAC305 solder paste, rosin and no-clean flux residues are removed by spray-in-air cleaning in which electronic-grade IPA is blended with deionized water. The working ratio is 70 vol% to 85 vol% IPA in DI water for the wash section; stencil underwipe uses undiluted IPA at 0.2 mL to 0.5 mL per wipe cycle. The compliance framework is IPC-J-STD-001H, with ionic cleanliness verified by IPC-TM-650 2.3.28 resistivity of solvent extract. The cleaning line operates at a solution temperature of 40°C to 60°C, manifold pressure of 1.5 bar to 3.0 bar, belt speed of 0.8 m/min to 1.5 m/min, followed by a DI water rinse and air-knife drying at 0.5 MPa. The terminal products are surface-mount PCB assemblies for industrial motor drives, PLC modules, and power conversion boards. Because neat IPA has a closed-cup flash point of 12°C, the wash section requires explosion-proof motors and VOC emission extraction; below 60 vol% IPA, white residue remains on high-reliability ENIG boards, while above 85 vol% IPA the flammability burden outweighs the marginal cleaning gain.
Two distinct electronic-grade IPA stages separate glass substrate wet cleaning from final vapor degreasing before indium tin oxide sputter or organic light-emitting diode deposition. The pre-final rinse bath contains 70 vol% IPA in DI water at 45°C, while the vapor degreasing zone uses undiluted IPA vapor at 80°C. Compliance is maintained under ISO 14644-1 Class 5 and ISO 14644-2 for airborne particulate monitoring, with chloride controlled by ASTM D512 and equipment safety defined under SEMI S2. The cleaning sequence consists of alkaline detergent wash, cascade DI water rinse, 40 kHz ultrasonic immersion at a transducer power density of 0.3 W/cm², IPA vapor contact for 60 s to 120 s, and CDA air-knife drying at 0.7 MPa. The terminal products are thin-film transistor liquid crystal display, OLED, and on-cell touch panel glass assemblies. A processing boundary is observed in ultrasonic tanks: exposure exceeding 15 min in 70 vol% IPA at 45°C has been associated with particle re-deposition and microdefect formation on display-grade glass, so cassette residence time is profiled against cavitation density.
| Application segment | Primary specification | Analytical method | Monitored parameter |
|---|---|---|---|
| Semiconductor wafer drying | SEMI C19 | ASTM D512, ASTM D4052, Karl Fischer titration | chloride, density, moisture |
| SMT flux removal | IPC-J-STD-001H | IPC-TM-650 2.3.28 | ionic residue resistivity |
| OLED glass cleaning | ISO 14644-1 Class 5 | ISO 14644-2, ASTM D512 | airborne particles, chloride |
| Advanced packaging rinse | SEMI C19 | ASTM D512, ASTM D1193 | chloride, dilution water purity |
| Fiber optic end-face cleaning | IEC 61300-3-35 | IEC 61300-3-35 inspection | end-face defect count, scratch width |
| HDD head stack cleaning | ISO 14644-1 Class 4 | ASTM D512, ICP-MS | anions, metal cations |
When a 200 mm advanced packaging line moves from conventional chip-scale packaging to fan-out wafer-level redistribution, the post-develop rinse formulation shifts from DI-water-only to an IPA-displacement step to prevent high-aspect-ratio resist line collapse. The IPA is applied undiluted from point-of-use dispensers at 0.5 mL to 2.0 mL per reconfigured 200 mm wafer, delivered through low-pressure fan nozzles at 0.6 bar to 1.0 bar. The designated compliance anchors are SEMI C19 for electronic-grade IPA and ASTM D512 for anion control; dilution water used in the preceding rinse meets ASTM D1193 Type E1. In the lithography bay, positive-tone novolac resist is developed with 0.26 N TMAH, rinsed with DI water, displaced with IPA, and dried at 1,500 rpm to 2,000 rpm; chamber relative humidity is held below 45% RH because evaporative cooling from IPA can lower wafer surface temperature to 10°C and condense moisture. The terminal output is wafer-level chip-scale packages and fan-out substrates with 5/5 µm redistribution layer line/space features. If exhaust humidity exceeds 45% RH, the temperature drop across the wafer surface produces watermark defects and resist pattern collapse in high-aspect-ratio structures.
End-face contamination on zirconia ferrule and fiber tip surfaces remains a dominant cause of return loss and insertion loss in single-mode patch cords. Electronic-grade IPA is applied at 0.2 mL to 0.4 mL per 2.5 mm ferrule end-face using sealed woven polyester wipes; the wet wipe is followed by a dry wipe in the opposite direction under 2 N to 5 N axial force. Compliance is assessed against IEC 61300-3-35 and Telcordia GR-326-CORE, with end-face defects classified by interferometric inspection at 200× magnification. The downstream production process is connector termination, epoxy curing at 80°C to 120°C, cleave, polish, and cleaning; for MPO-12/24 connectors, the wet/dry wipe sequence is performed before and after interferometer verification. The terminal products are OS2 single-mode patch cords, MPO-12/24 trunk assemblies, and pigtails. A limitation is that IPA with water content above 0.5% by mass leaves drying streaks on zirconia ferrule end-face surfaces, and excess solvent migration along the fiber coating can cause buffer delamination at the connector boot interface.
Head stack assembly cleaning uses electronic-grade IPA as the final organic-residue and particulate removal solvent before helium-sealed drive assembly. The solvent is dispensed undiluted at 0.5 mL to 1.0 mL per actuator assembly, with point-of-use filtration at 0.1 µm to remove particle contamination. Cleanroom conditions are ISO 14644-1 Class 4, and chemical quality follows SEMI C19 limits with anion/cation testing by ASTM D512 and ICP-MS. The process sequence consists of automated ultrasonic immersion at 40 kHz and 45°C for 5 min to 10 min, IPA vapor drying, and vacuum bake at 80°C for residual moisture removal. The terminal product is the helium-sealed hard disk drive head stack assembly with read/write heads aligned for server and nearline storage platforms. IPA with metallic ion content above 1 ppb is not used in head stack cleaning because residual metal ions on the read/write head surface induce corrosion failure in high-humidity drive tests.
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BASF Isopropyl Alcohol Electronic Grade is a high-purity liquid process chemical supplied for semiconductor, flat-panel display, and microelectromechanical system manufacturing. The material is chemically identified as propan-2-ol, CAS 67-63-0, EC 200-661-7, with molecular formula C₃H₈O and molecular weight 60.10 g/mol. The commercial designation does not carry a separate public model number; procurement should reference the BASF electronic materials material number and the lot-specific certificate of analysis. The product belongs to the BASF electronic-grade solvent portfolio and is filled under cleanroom conditions, typically into high-density polyethylene or fluoropolymer containers after submicrometre filtration. Its use is concentrated in final cleaning and drying steps where ionic residue, particle deposition, and water carry-over are critical defect sources.
Physical properties relevant to process design include boiling point 82.3 °C, density 0.785 g/cm³ at 20 °C, vapour pressure 4.4 kPa at 20 °C, viscosity approximately 2.4 mPa·s at 20 °C, and autoignition temperature 399 °C. These values are typical for high-purity isopropanol and do not substitute for lot-specific data. The evaporation rate and surface tension are important in photomask cleaning and final rinse operations where dried film formation must be avoided.
The separation is defined not by a single assay value but by the simultaneous control of nonvolatile residue, trace metals, water, and particle burden. Isopropanol supplied against ASTM D770-11 may provide acceptable solvent strength for degreasing but does not generally report sodium, potassium, iron, calcium, magnesium, copper, zinc, aluminium, chromium, nickel, manganese, or lead at semiconductor-relevant thresholds. ACS reagent isopropanol is controlled for assay and evaporation residue but does not carry particle or individual metal limits down to parts-per-billion levels. Electronic-grade releases of the BASF type are lot-specific and typically include water ≤0.1% by ASTM E203, nonvolatile residue ≤5 ppm by ASTM D1353, and total trace metals ≤10 ppb or element-specific limits ≤1 ppb by ICP-MS. These limits are not universal across all electronic-grade products; the BASF certificate of analysis is the definitive document. Published data for this specific configuration is limited where regional packaging codes differ.
| Parameter | Industrial ASTM D770-11 | ACS Reagent | Electronic-Grade Release |
|---|---|---|---|
| Assay | ≥99.0% | ≥99.5% | ≥99.8% |
| Water | 0.2% max | 0.2% max | ≤0.1% |
| Nonvolatile residue | ≤10 ppm | ≤5 ppm | ≤5 ppm |
| Trace metals | not controlled | not individually specified | ≤10 ppb total; individual elements ≤1 ppb |
| Particle control | not controlled | not controlled | ≤10 particles/mL at ≥0.5 µm |
| Final filtration | not specified | not specified | 0.2 µm |
The difference from other isopropanol products becomes critical when the solvent is used as a final rinse. Reagent and industrial grades can carry residues that re-deposit on gate oxide surfaces or metal lines. Electronic-grade material is not interchangeable with lower-cost semiconductor-grade IPA from distributors unless the point-of-use analytical data confirm the same metal, water, and particle limits. The product also differs from nanoelectronic cleaning media such as HF/IPA mixtures or tetramethylammonium hydroxide solutions; it is intended as a solvent and drying agent, not as an oxide etchant or photoresist developer.
In a wet-bench final-rinse configuration, the solvent is dispensed after dilute hydrofluoric acid or RCA SC-1/SC-2 chemistry to displace residual water from high-aspect-ratio trenches and through-silicon vias. Low water content and low particulate loading are relevant because Marangoni drying relies on a surface-tension gradient generated by the difference between water at approximately 72 mN/m and isopropanol at approximately 21.7 mN/m at 20 °C. If the solvent carries ionic residue, the final rinse can redeposit sodium or potassium on gate oxide surfaces, contributing to threshold-voltage instability or time-dependent dielectric breakdown. Production wet benches using spin rinse dryers or single-wafer cleaning tools typically maintain the chemical in 316L stainless steel, PFA, or PTFE delivery lines; batch-to-batch variance in water content above 0.1% can extend drying time or leave residual moisture at the wafer edge. Equipment settings for immersion baths vary from 20 °C to 45 °C in enclosed modules with local exhaust; the lower temperature range is preferred to minimize vapour accumulation.
IPA vapour drying uses the miscibility and low surface tension of isopropanol to generate a concentration gradient at the wafer surface. A typical sequence heats the chemical in a quartz or 316L stainless-steel vapour bath to maintain a controlled vapour concentration; wafers are withdrawn slowly from the water/IPA meniscus. The process window for stable vapour formation is narrow: bath temperatures below the boiling point of 82.3 °C may not produce sufficient vapour pressure for stable Marangoni flow, whereas temperatures above 90 °C can increase the formation of acetone oxidation by-products if oxygen is present. The closed-cup flash point of 12 °C and flammable limits of 2% to 12.7% by volume require explosion-proof electrical classification and continuous VOC monitoring. The drying bath must be blanketed or maintained under local exhaust to prevent vapour levels from reaching the lower flammable limit. Published data for specific semiconductor fabs using BASF electronic-grade IPA in vapour dryers is limited, but the solvent’s physical properties align with standard IPA vapour drying requirements.
Apart from wafer cleaning, the solvent is used in precision optics and display manufacturing for cleaning indium tin oxide surfaces and removing organic residues before vacuum deposition. In such applications, electronic-grade purity reduces the risk of carbonaceous residue on substrates that undergo subsequent plasma-enhanced chemical vapour deposition or sputtering. The specification limits for sodium and potassium are particularly relevant for thin-film transistor backplane production, where ion migration can shift flat-band voltage. The BASF electronic-grade isopropyl alcohol may be used as a rinse after aqueous detergent cleaning, but it is not a surfactant-containing cleaning blend and should not be expected to emulsify heavy photoresist residues without mechanical agitation or upstream alkaline removal.
Packaging and handling define the difference between a material that passes bulk analysis and a material that remains clean at point of use. Electronic-grade isopropanol is filled in cleanroom environments rated ISO 14644-1 Class 5 or better, through 0.2 µm filters, into containers that have been pre-cleaned and validated for leachables. Typical packaging formats for semiconductor use are 4 L glass or fluoropolymer bottles and 20 L high-density polyethylene jerricans; larger regional formats may use 200 L lined steel or high-purity high-density polyethylene drums. Incoming quality control should verify the lot-specific certificate of analysis against the user’s process limits: assay by GC ≥99.8%, water by ASTM E203 ≤0.1%, nonvolatile residue by ASTM D1353 ≤5 ppm, acidity ≤0.002 meq/g, chloride ≤0.5 ppm, sulphate ≤0.5 ppm, and individual trace metals ≤1 ppb for sodium, potassium, iron, calcium, magnesium, copper, zinc, aluminium, chromium, nickel, manganese, and lead. Particle counts after filtration are commonly specified as ≤10 particles/mL at ≥0.5 µm. Transfer should use closed dispensing systems to limit atmospheric moisture uptake; isopropanol is hygroscopic and can exceed the 0.1% water limit if left in an open bath for extended periods.
In semiconductor fabs, the solvent is often qualified by sampling from the point-of-use filter and analyzing for particles, total organic carbon, and cation/anion profiles. A typical point-of-use dispense system includes a 0.1 µm or 0.05 µm final filter, although the product may be supplied after 0.2 µm filtration. The user’s failure modes in production have included increased particle counts after container changeover, water breakthrough caused by improper nitrogen blanketing, and ionic residue drift when the solvent is exposed to unpassivated stainless-steel fittings. These are controlled by closed-loop dispensing hardware and by routine lot-specific certificate-of-analysis verification. Shelf life and lot traceability are maintained only if the original container closure and cleanroom outer packaging remain intact.
| Reference | Designation | Relevance to product release or use |
|---|---|---|
| CAS Registry | 67-63-0 | Chemical identity |
| European Inventory | 200-661-7 | REACH registration support |
| ASTM D770-11 | isopropanol specification | Minimum baseline for solvent quality |
| SEMI C1.10 | electronic-grade isopropyl alcohol | Semiconductor-specific purity framework |
| ISO 14644-1 | Class 5 cleanroom | Filling and packaging environment |
| NFPA 30 | flammable liquid storage | Handling and storage of low-flash-point solvent |
Operational boundaries are set by the solvent’s flammability and hygroscopicity. Storage must be in closed containers away from oxidizing agents; the vapour may form flammable mixtures at temperatures above the flash point. Transfer systems should be constructed from PTFE, PFA, high-density polyethylene, or 316L stainless steel. Natural rubber, butyl rubber, and some elastomeric seals should be avoided in continuous contact because of swelling and extractable contamination. The material is not intended for use as a photoresist stripper or oxide etchant. Waste disposal must follow local hazardous-waste regulations for waste solvents containing isopropanol and possible trace process impurities.